Hostname: page-component-745bb68f8f-b6zl4 Total loading time: 0 Render date: 2025-02-05T09:04:16.120Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication and characterization of chromium-chromium oxide-chromium metal-insulator-metal (MIM) tunnel junctions

Published online by Cambridge University Press:  25 November 2014

Nacer Debbar ,
Mohamed Syaryadhi  and
Mohamed Abdel-Rahman
Nacer Debbar*
Affiliation:
Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
Mohamed Syaryadhi
Affiliation:
Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
Mohamed Abdel-Rahman
Affiliation:
Prince Sultan Advanced Technologies Research Institute, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
*
ae-mail: [email protected]
Get access

Abstract

In this paper, we present the fabrication and characterization of sputter deposited thin-film Cr-CrOx-Cr MIM diodes for application in millimeter wave detectors. The oxide layers were grown by thermal oxidation of the first deposited Cr electrode at 300 °C and at atmospheric pressure. The appreciable nonlinearity shown by these diodes confirms their viability in millimeter wave and infrared applications. The fabricated MIM structures exhibited sensitivity as high as 2.58 V−1 at Vbias of 0.3 V. Additionally, numerical integration of Simmons tunneling equations were utilized to extract the MIM diodes parameters. The correlation between the extracted parameters, the diodes performance and the fabrication conditions would be very valuable to effectively design and fabricate structures with improved performance.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 68 , Issue 3 , December 2014 , 30302
Copyright
© EDP Sciences, 2014

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Sanchez, A., Davis, C.F. Jr., Liu, K.C., Javan, A., J. Appl. Phys. 49, 5270 (1978)CrossRef
Dees, J.W., Microwave J. 9, 48 (1966)
Slayman, C.W., Gustafson, T.K., IEEE MTT-S Int. Microwave Symp. Digest 338 (1981)CrossRef
Abdel-Rahman, M.R., González, F.J., Boreman, G.D., Electron. Lett. 40, 116 (2004)CrossRef
Abdel-Rahman, M.R., Monacelli, B., Zummo, G., Weeks, A., Boreman, G.D., Opt. Eng. 44, 066401 (2005)CrossRef
Hoofring, A.B., Kapoor, V.J., Krawozonek, W., J. Appl. Phys. 66, 430 (1989)CrossRef
Fumeaux, C., Herrmann, W., Kneubuhl, F.K., Rothuizen, H., Infrared Phys. Technol. 39, 123 (1998)CrossRef
Bean, J.A., Tiwari, B., Bernstein, G.H., Fay, P., Porod, W., J. Vac. Sci. Technol. B 27, 11 (2009)CrossRef
Esfandiari, P., Bernstein, G., Fay, P., Porod, W., Rakos, B., Zarandy, A., Berland, B., Boloni, L., Boreman, G., Lail, B., Monacelli, B., Weeks, A., Proc. SPIE 5783, 470 (2005)CrossRef
Frenkel, J., Phys. Rev. 36, 1604 (1930)CrossRef
Holm, R., J. Appl. Phys. 22, 569 (1951)CrossRef
Stratton, R., J. Phys. Chem. Solids 23, 1177 (1962)CrossRef
Simmons, J.G., J. Appl. Phys. 34, 1793 (1963)CrossRef
Reintsema, C., Journal of Research of the National Institute of Standards and Technology 105, 490 (2002)
Bean, J.A., Weeks, A., Boreman, G.D., IEEE J. Quantum Electron. QE-47, 126 (2011)CrossRef
Fisher, J.C., Giaever, I., J. Appl. Phys. 32, 172 (1960)CrossRef
Hartman, T.E., Chivian, J.S., Phys. Rev. 134, A1094 (1964)CrossRef
Arakawa, N., Otaka, Y., Shikki, K., Thin Solid Films 505, 67 (2006)CrossRef
Krishnan, S., La Rosa, H., Stefanakos, E., Bhansali, S., Buckle, K., Sens. Actuators A 142, 40 (2008)CrossRef
Ratnadurai, R., Krishnan, S., Stefanakos, E., Goswami, D.Y., Bhansali, S., AIP Conf. Proc. 1313, 403 (2010)CrossRef
Heiblum, M., Wang, S., Whinnery, J.R., Gustafson, T.K., IEEE J. Quantum Electron. QE-14, 159 (1978)CrossRef
Hoey, M.L., Carlson, J.B., Osgood, R.M., Kimball, B., Buchwald, W., Appl. Phys. Lett. 97, 153104 (2010)CrossRef
Fumeaux, C., Alda, J., Boreman, G.D., Opt. Lett. 24, 1629 (1999)CrossRef
Bohm, D., Quantum Theory (Prentice-Hall Inc., New Jersey, USA, 1951)Google Scholar
Hobbs, P.C.D., Laibowitz, R.B., Libsch, F.R., Appl. Opt. 44, 6813 (2005)CrossRef
Gutsev, G.L., Jena, P., Zhai, H.J., Wang, L.S., J. Chem. Phys. 115, 7935 (2001)CrossRef
Wilke, I., Oppliger, Y., Herrmann, W., Kneubühl, F.K., Appl. Phys. A 58, 329 (1994)CrossRef
Stella, K., Diesing, D., J. Electrochem. Soc. 154, C663 (2007)CrossRef