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Étude des sources de bruit BF dans les diodes de commutation PIN à base de silicium amorphe hydrogéné

Published online by Cambridge University Press:  15 March 1998

J.-M. Péransin ,
P. Balco ,
R. Alabedra ,
T. Ducourant  and
B. Orsal
J.-M. Péransin
Affiliation:
Centre d'Électronique et de Microoptoélectronique de Montpellier USTL II (URA 391), Place Bataillon, 34095 Montpellier, France
P. Balco
Affiliation:
Centre d'Électronique et de Microoptoélectronique de Montpellier USTL II (URA 391), Place Bataillon, 34095 Montpellier, France
R. Alabedra
Affiliation:
Centre d'Électronique et de Microoptoélectronique de Montpellier USTL II (URA 391), Place Bataillon, 34095 Montpellier, France
T. Ducourant
Affiliation:
Thomson Tubes Électroniques, Z.I. Centr'Alp, 38430 Moirans, France
B. Orsal*
Affiliation:
Centre d'Électronique et de Microoptoélectronique de Montpellier USTL II (URA 391), Place Bataillon, 34095 Montpellier, France
*
[email protected]
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Abstract

We present experimental results on low frequency noise in amorphous PIN diodes under forward bias by pulses and by direct current. We have developed a new method using a differential amplifier to measure the noise in pulse regime. The study separates the white noise and the 1/f noise depending on current levels. The white noise can be evaluated by the shot noise through the various interfaces damped by their dynamic impedance. The excess noise shows a behaviour in f−1/2, due to defects in the intrinsic zone and a current dependence in I3/2 , current limited by the NN+ junction.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 1 , Issue 3 , March 1998 , pp. 369 - 375
Copyright
© EDP Sciences, 1998

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