Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-25T16:23:18.821Z Has data issue: false hasContentIssue false
  • English
  • Français

Electrical properties of safranine T/p-Si organic/inorganic semiconductor devices

Published online by Cambridge University Press:  26 February 2010

Ö. Güllü ,
S. Asubay ,
M. Biber ,
T. Kiliçoglu  and
A. Türüt
Ö. Güllü*
Affiliation:
Department of Physics, Faculty of Sciences and Arts, Batman University, 72060 Batman, Turkey
S. Asubay
Affiliation:
Department of Physics, Faculty of Sciences and Arts, Dicle University, 21280 Diyarbakir, Turkey
M. Biber
Affiliation:
Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey
T. Kiliçoglu
Affiliation:
Department of Physics, Faculty of Sciences and Arts, Batman University, 72060 Batman, Turkey Department of Physics, Faculty of Sciences and Arts, Dicle University, 21280 Diyarbakir, Turkey
A. Türüt
Affiliation:
Department of Physics, Faculty of Sciences, Atatürk University, 25240 Erzurum, Turkey
*
[email protected]
Get access

Abstract

We investigated the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of identically prepared safranine T/p-Si organic/inorganic Schottky devices (total 26 diodes) formed by evaporation of organic compound solution on p-Si semiconductor substrate. It was seen that the safranine T organic thin film on the p-Si substrate showed a good rectifying behavior. The barrier heights and ideality factors of all devices were extracted from the electrical characteristics. The mean barrier height and mean ideality factor from I-V measurements were calculated as 0.59±0.02 eV and 1.80±0.20, respectively. Also, the mean barrier height and mean acceptor doping concentration from C-V measurements were calculated as 0.67±0.10 eV and (6.96±0.37)×1014 cm-3, respectively. The discrepancy in the barrier height values obtained from I-V and C-V characteristics has been attributed to different nature of the measurements. The discrepancy between these values can also be due to the existence of the interfacial native oxide and the organic safranine T thin layer between the semiconductor substrate and top contact metal.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 50 , Issue 1: Focus on Electrical Contacts , April 2010 , 10401
Copyright
© EDP Sciences, 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Koezuka, H., Etoh, S., J. Appl. Phys. 54, 2511 (1983) CrossRef
Kurata, T., Koezuka, H., Tsunoda, S., Ando, T., J. Phys. D: Appl. Phys. 19, L57 (1986) CrossRef
Turut, A., Koleli, F., J. Appl. Phys. 72, 818 (1992) CrossRef
Onganer, Y., Saglam, M., Turut, A., Efeoglu, H., Tuzemen, S., Solid-State Electron. 39, 677 (1996) CrossRef
Gupta, R., Misra, S.C.K., Malhotra, B.D., Beladakere, N.N., Chandra, S., Appl. Phys. Lett. 58, 51 (1991) CrossRef
Assadi, A., Svensson, C., Willander, M., Inganas, O., J. Appl. Phys. 72, 2900 (1992) CrossRef
Camaioni, N., Casalbore-Miceli, G., Beggiato, G., Cristani, M., Summonte, C., Thin Solid Films 366, 211 (2000) CrossRef
Poddar, R., Luo, C., Solid-State Electron. 50, 1687 (2006) CrossRef
Abthagir, P.S., Saraswathi, R., Org. Electron. 5, 299 (2004) CrossRef
Huang, L.M., Wen, T.C., Gopalan, A., Thin Solid Films 473, 300 (2005) CrossRef
Cakar, M., Biber, M., Saglam, M. et al., J. Polym. Sci. Part B 41, 1334 (2003) CrossRef
Lonergan, M., Annu. Rev. Phys. Chem. 55, 257 (2004) CrossRef
Tada, K., Wada, M., Onoda, M., J. Phys. D: Appl. Phys. 36, L70 (2003) CrossRef
Kaneto, K., Nakajima, J., Nakagawa, M., Takashima, W., Thin Solid Films 438, 195 (2003) CrossRef
Liang, G.R., Cui, T.H., Varahramyan, K., Solid-State Electron. 47, 691 (2003) CrossRef
Aydogan, S., Saglam, M., Turut, A., Vacuum 77, 269 (2005) CrossRef
Forrest, S.R., Schmidt, P.H., J. Appl. Phys. 59, 513 (1986) CrossRef
Forrest, S.R., Kaplan, M.L., Schmidt, P.H., J. Appl. Phys. 60, 2406 (1986) CrossRef
Cakar, M., Turut, A., Synth. Met. 138, 549 (2003) CrossRef
Kılıcoglu, T., Aydın, M.E., Ocak, Y.S., Physica B 388, 244 (2007) CrossRef
Kampen, T., Schuller, A., Zahn, D.R.T., Biel, B., Ortega, J., Perez, R., Flores, F., Appl. Surf. Sci. 234, 341 (2004) CrossRef
Zahn, D.R.T., Kampen, T.U., Mendez, H., Appl. Surf. Sci. 212, 423 (2003) CrossRef
Roberts, A.R.V., Evans, D.A., Appl. Phys. Lett. 86, 072105 (2005) CrossRef
Bolognesi, A., Di Carlo, A., Lugli, P., Kampen, T., Zahn, D.R.T., J. Phys.: Condens. Matter 15, S2719 (2003)
Kampen, T.U., Park, S., Zahn, D.R.T., Appl. Surf. Sci. 190, 461 (2002) CrossRef
Cakar, M., Temirci, C., Turut, A., Synth. Met. 142, 177 (2004) CrossRef
Yakuphanoglu, F., Physica B 389, 306 (2007) CrossRef
Gullu, O., Turut, A., Asubay, S., J. Phys.: Condens. Matter 20, 045215 (2008)
Park, S.K., Lee, C., Min, K.C., Lee, N.S., Bull. Korean Chem. Soc. 25, 1817 (2004)
Biswas, N., Umapathy, S., J. Phys. Chem. A 101, 5555 (1997) CrossRef
Inoue, K., Takeuchi, H., Konaka, S., J. Phys. Chem. A 105, 6711 (2001) CrossRef
Aydin, M.E., Türüt, A., Microelectron. Eng. 84, 2875 (2007) CrossRef
Schmitsdorf, R.F., Kampen, T.U., Mönch, W., J. Vac. Sci. Technol. B 15, 1221 (1997) CrossRef
Mönch, W., J. Vac. Sci. Technol. B 17, 1867 (1999) CrossRef
Tung, R.T., Phys. Rev. B 45, 13509 (1992) CrossRef
Song, Y.P., Van Meirhaeghe, R.L., Laflere, W.H., Cardon, F., Solid-State Electron. 29, 633 (1986) CrossRef
Werner, J.H., Guttler, H.H., J. Appl. Phys. 69, 1522 (1991) CrossRef
Sullivan, J.P., Tung, R.T., Pinto, M.R., Graham, W.R., J. Appl. Phys. 70, 7403 (1991) CrossRef
Rau, U., Guttler, H.H., Werner, J.H., Mater. Res. Soc. Symp. Proc. 260, 245 (1992) CrossRef
Osvald, J., Dobrocka, E., Semicond. Sci. Technol. 11, 1198 (1996) CrossRef
Leroy, W.P., Opsomer, K., Forment, S., Van Meirhaeghe, R.L., Solid-State Electron. 49, 878 (2005) CrossRef
Biber, M., Gullu, O., Forment, S., Van Meirhaeghe, R.L., Turut, A., Semicond. Sci. Technol. 21, 1 (2006) CrossRef
Cetin, H., Sahin, B., Ayyildiz, E., Turut, A., Physica B 364, 133 (2005) CrossRef
Saglam, M., Cimilli, F.E., Turut, A., Physica B 348, 397 (2004) CrossRef
Detavernier, C., Van Meirhaeghe, R.L., Donaton, R., Maex, K., Cardon, F., J. Appl. Phys. 84, 3226 (1998) CrossRef
Vanalme, G.M., Goubert, L., Van Meirhaeghe, R.L., Cardon, F., Van Daele, P., Semicond. Sci. Technol. 14, 871 (1999) CrossRef
Im, H.J., Ding, Y., Pelz, J.P., Choyke, W.J., Phys. Rev. B 64, 075310 (2001) CrossRef
Altindal, S., Kanbur, H., Tataroglu, A., Bülbül, M.M., Physica B 399, 146 (2007) CrossRef
E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, 2nd edn. (Clarendon Press, Oxford, 1988)
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)
Lou, Y.S., IEEE Trans. Electron Devices 41, 558 (1994)
Van Meirhaeghe, R.L., Laflere, W.H., Cardon, F., Solid-State Electron. 16, 1189 (1983) CrossRef
Card, H.C., Rhoderick, E.H., J. Phys. D 4, 1589 (1971) CrossRef