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Electrical characterizations of SnPc/p-GaAs heterojunction

Published online by Cambridge University Press:  08 April 2009

M. M. El-Nahass  and
A. S. Faidah
M. M. El-Nahass*
Affiliation:
Physics department, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt
A. S. Faidah
Affiliation:
Physics Department, Faculty of Science, King Abdul Aziz University, Jeddah, Saudi Arabia
*
[email protected]
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Abstract

Current voltage and capacitance-voltage characteristics for SnPc thin film with ~105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ~303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.4×1014 cm-3 with a built in voltage ~0.55 eV.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 46 , Issue 2 , May 2009 , 20401
Copyright
© EDP Sciences, 2009

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