Hostname: page-component-6bf8c574d5-685pp Total loading time: 0 Render date: 2025-03-07T21:27:24.426Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of low doping concentration on interconnected microstructural ZnO:Al thin films prepared by the sol-gel technique

Published online by Cambridge University Press:  02 September 2006

S. W. Xue ,
X. T. Zu ,
X. Xiang ,
H. Deng  and
Z. Q. Xu
S. W. Xue
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, P.R. China
X. T. Zu*
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China International Center for Material Physics, Chinese Academy of Sciences, Shengyang 110015, P.R. China
X. Xiang
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
H. Deng
Affiliation:
School of Microelectronics and Solid-state Electronics, University of Electronics Sciences and Technology of China, Chengdu 610054, P.R. China
Z. Q. Xu
Affiliation:
School of Microelectronics and Solid-state Electronics, University of Electronics Sciences and Technology of China, Chengdu 610054, P.R. China
*
[email protected]
Get access

Abstract

Interconnected microstructural ZnO:Al thin films with low doping concentration (Al/Zn ≤1%) were deposited on (0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the (002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 35 , Issue 3 , September 2006 , pp. 195 - 200
Copyright
© EDP Sciences, 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Petrou, P., Singh, R., Brodie, D.E., Appl. Phys. Lett. 35, 930 (1979) CrossRef
Soulette, P., Bethke, S., Wessels, B.W., Pan, H., J. Cryst. Growth 86, 248 (1988) CrossRef
Zhou, Y., Kelly, P.J., Postill, A., Abu-Zeid, O., Alnajjar, A.A., Thin Solid Films 447, 33 (2004) CrossRef
Paraguay, F., Morales, D.J., Estrada, W. L. et al., Thin Solid Films 366, 16 (2000) CrossRef
Valle, G.G., Hammer, P., Pulcinelli, S.H., Santill, C.V., J. Eur. Ceram. Soc. 24, 1009 (2004) CrossRef
Lee, J.H., Park, B.O., Thin Solid Films 426, 94 (2003) CrossRef
Lee, H.W., Laua, S.P., Wang, Y.G. et al., J. Cryst. Growth 268, 596 (2004) CrossRef
Wu, Y.Q., Du, J., Choy, K.L. et al., Thin Solid Films 472, 150 (2005) CrossRef
Ohyama, M., Kozuka, H., Yoko, T., Thin Solid Films 306, 78 (1997) CrossRef
Fujihara, S., Sasaki, C., Kimura, T., Appl. Surf. Sci. 180, 341 (2001) CrossRef
Bonasewicz, P., Hirschwald, W., Neumann, G., J. Electrochem. Soc. 133, 2270 (1986) CrossRef
Ohya, Y., Saiki, H., Tanaka, T., Takahashi, Y., J. Am. Ceram. Soc. 79, 825 (1996) CrossRef
Fujihara, S., Kusakado, J., Kimura, T., J. Mater. Sci. Lett. 17, 781 (1998) CrossRef
Studeninkin, S.A., Golego, N., Cocivcra, M., J. Appl. Phys. 84, 2287 (1998) CrossRef
Vanheusden, K., Warren, W.L., Seager, C.H. et al., J. Appl. Phys. 79, 7983 (1996) CrossRef
Shan, F.K., Liu, G.X., Lee, W.J. et al., Appl. Phys. Lett. 86, 221910 (2005) CrossRef
Zhao, Q.X., Klason, P., Willander, M. et al., Appl. Phys. Lett. 87, 211912 (2005) CrossRef
Janotti, A., Chris, G., Walle, V.D., J. Cryst. Growth 287, 58 (2006) CrossRef
Bethke, S., Pan, H., Wesseis, B.W., Appl. Phys. Lett. 52, 140 (1988) CrossRef
Du, G., Wang, J., Wang, X., Jiang, X. et al., Vacuum 69, 476 (2003) CrossRef
Jung, M., Lee, J., Park, S., J. Cryst. Growth 283, 384 (2005) CrossRef
Kumbhojkar, N., Mahamuni, S., Leppert, V. et al., Nanostruct. Mater. 10, 117 (1998) CrossRef
Mahamuni, S., Bendre, B.S., Leppert, V.J. et al., Nanostruct. Mater. 7, 659 (1996) CrossRef
Mahamuni, S., Khosravi, A., Kundu, M. et al., J. Appl. Phys. 73, 5237 (1993) CrossRef
Look, D.C., Hemsky, J.W., Sizelove, J.R., Phys. Rev. Lett. 82, 2552 (1999) CrossRef
Kohan, A.F., Geder, G., Morgan, D. et al., Phys. Rev. B 61, 15019 (2000) CrossRef
Van de Walle, C.G., Phys. Rev. Lett. 85, 1012 (2000) CrossRef
Zhao, J.L., Li, X.M., Bian, J. et al., J. Cryst. Growth 276, 507 (2005) CrossRef
Sato, H., Minami, T., Tamura, Y. et al., Thin Solid Films 246, 86 (1994) CrossRef
Hu, J., Gordon, R.G., J. Appl. Phys. 71, 880 (1992) CrossRef
Zou, J., Zhou, S.M., Xia, C.T. et al., J. Cryst. Growth 280, 185 (2005) CrossRef