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Effects of low doping concentration on interconnected microstructural ZnO:Al thin films prepared by the sol-gel technique

Published online by Cambridge University Press:  02 September 2006

S. W. Xue ,
X. T. Zu ,
X. Xiang ,
H. Deng  and
Z. Q. Xu
S. W. Xue
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China Department of Physics, Zhanjiang Normal College, Zhanjiang 524048, P.R. China
X. T. Zu*
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China International Center for Material Physics, Chinese Academy of Sciences, Shengyang 110015, P.R. China
X. Xiang
Affiliation:
Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China
H. Deng
Affiliation:
School of Microelectronics and Solid-state Electronics, University of Electronics Sciences and Technology of China, Chengdu 610054, P.R. China
Z. Q. Xu
Affiliation:
School of Microelectronics and Solid-state Electronics, University of Electronics Sciences and Technology of China, Chengdu 610054, P.R. China
*
[email protected]
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Abstract

Interconnected microstructural ZnO:Al thin films with low doping concentration (Al/Zn ≤1%) were deposited on (0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the (002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 35 , Issue 3 , September 2006 , pp. 195 - 200
Copyright
© EDP Sciences, 2006

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