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Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes

Published online by Cambridge University Press:  31 October 2012

A. Bobby ,
P.S. Gupta  and
B.K. Antony
A. Bobby*
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
P.S. Gupta
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
B.K. Antony
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826004, Jharkhand, India
*
ae-mail: [email protected]
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Abstract

The reverse I-V characteristics of In-pWSe2 and Al-pWSe2 Schottky barrier diodes were investigated at room temperature with two different metal thicknesses. A model is presented on the basis of thermionic emission and tunneling to explain the unusually high leakage current observed in these diodes. It has been identified that the major contribution to leakage current is by tunneling mechanism, which significantly affects the reverse I-V characteristics of the Schottky contacts, along with a very small amount of thermionic emission current. We have also extracted various Schottky diode parameters of the two types of diodes fabricated and compared the data. It is found that the diode with 1000 Å metal thickness possesses more tunneling current compared to 500 Å diode.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 60 , Issue 1 , October 2012 , 10104
Copyright
© EDP Sciences, 2012

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