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Effect of thermal annealing on structural, optical and electrical properties of RF reactive magnetron sputtered CdO thin films

Published online by Cambridge University Press:  10 October 2014

Gadipelly Anil Kumar
Affiliation:
Department of Physics, Osmania University, Hyderabad 500007, India
Musugu Ramana Reddy
Affiliation:
Department of Physics, Osmania University, Hyderabad 500007, India
Katta Narasimha Reddy
Affiliation:
Department of Physics, Mahatma Gandhi University, Nalgonda 508254, India
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Abstract

Recently, there has been a lot of interest on transparent conducting oxide (TCO) materials which have common application in solar cells and some optoelectronic devices. In this work, cadmium oxide (CdO) thin films have been deposited on glass substrates by RF reactive magnetron sputtering technique and subsequently annealed in air from 200 °C to 500 °C. The effect of annealing temperature on the structural, morphological, optical and electrical properties of CdO films is systematically investigated by X-ray diffraction, scanning electron microscopy with energy dispersive spectroscopy, atomic force microscopy, UV-visible spectrophotometer and Hall effect measurements. X-ray diffraction (XRD) studies showed that the films are polycrystalline in nature with a preferential orientation along (2 0 0) plane. Atomic force microscopy studies showed that these films are very smooth with maximum root mean square roughness of 3.13 nm. The CdO films formed at annealing temperature of 400 °C exhibited optical transmittance of 84%, electrical resistivity of 1.9 × 10−3 Ω cm and figure of merit of 1.8 × 10−3 Ω−1.

Type
Research Article
Copyright
© EDP Sciences, 2014

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References

Yang, Y., Wang, L., Yan, H., Jin, S., Marksa, T.J., Li, S., Appl. Phys. Lett. 89, 051116 (2006)CrossRef
Yakuphanoglu, F., Caglar, M., Caglar, Y., Ilican, S., J. Alloys Compd. 506, 188193 (2010)CrossRef
Haul, R., Just, D., J. Appl. Phys. 33, 487 (1962)CrossRef
Ueda, N., Maeda, H., Hosono, H., Kawazoe, H., J. Appl. Phys. 84, 61746177 (1998)CrossRef
Contreras, M.A., Egaas, B., Ramanathan, K., Hiltner, J., Swartzlander, A., Hasoon, F., Noufi, R., Prog. Photovolt. Res. Appl. 7, 311316 (1999)3.0.CO;2-G>CrossRef
Niitsoo, O., Sarkar, S.K., Pejoux, C., Ruhle, S., Cahen, D., Hodes, G., J. Photochem. Photobiol. A 181, 306313 (2006)CrossRef
Moholkar, A.V., Agawane, G.L., Sim, K.-U., Kwon, Y.-B., Choi, D.S., Rajpure, K.Y., Kim, J.H., J. Alloys Compd. 506, 794799 (2010)CrossRef
Ramakrishna Reddy, K.T., Sravani, C., Miles, R.W., J. Cryst. Growth 184/185, 10311034 (1998)CrossRef
Gupta, R.K., Ghosh, K., Patel, R., Kahol, P.K., J. Alloys Compd. 509, 41464149 (2011)CrossRef
Ismail, R.A., Rasheed, B.G., Salm, E.T., Al-Hadethy, M., J. Mater. Sci.: Mater. Electron. 18, 1027 (2007)
Gutierrez, L.R., Romero, J.J.C., Tapia, J.M.P., Calva, E.B., Flores, J.C.M., Lopez, M.O., Mater. Lett. 60, 3866 (2006)CrossRef
Kim, B.-J., Ok, Y.-W., Seong, T.-Y., Ashrafi, A.B.M.A., Kumano, H., Suemune, I., J. Cryst. Growth 252, 219225 (2003)CrossRef
Gupta, R.K., Serbetçi, Z., Yakuphanoglu, F., J. Alloys Compd. 515, 96100 (2012)CrossRef
Lamb, D.A., Irvine, S.J.C., J. Cryst. Growth 332, 1720 (2011)CrossRef
Anil Kumar, G., Ramana Reddy, M.V., Reddy, K.N., IEEE Xplore digital library, DOI: 10.1109/ICONSET.2011.6167911
Van der Pauw, L.J., Philips Res. Rep. 13, 19 (1958)
Powder Diffraction File, JCPDS-International Center for Diffraction Data, Pennsylvania, 1972
Pillai, S.O., Solid State Physics, Structure & Electron Related Properties, 1st Edn. (Wiley Eastern Limited, 1994)Google Scholar
Khranovskyy, V., Grossner, U., Nilsen, O., Lazorenko, V., Lashkarev, G.V., Svensson, B.G., Yakimova, R., Thin Solid Films 515, 472 (2006)CrossRef
Sujatha, Ch., Mohan Rao, G., Uthanna, S., Mater. Sci. Eng. B 94, 106 (2002)CrossRef
Adamik, M., Barna, P.B., Tomov, I., Biro, D., Phys. Status Solidi A 145, 275281 (1994)CrossRef
Buckel, W., J. Vac. Sci. Technol. A 6, 606 (1969)CrossRef
Gurumurugan, K., Mangalaraj, D., Narayandass, Sa.K., J. Cryst. Growth 147, 355360 (1995)CrossRef
Chrysicopoulou, P., Davazoglou, D., Trapalis, Chr., Kordas, G., Thin Solid Films 323, 188 (1998)CrossRef
Bhosale, C.H., Kambale, A.V., Kokate, A.V., Rajpure, K.Y., Mat. Sci. Eng. B 122, 6771 (2005)CrossRef
Ma, D., Ye, Z.Z., Wang, L., Huang, J.Y., Zhao, , Mater. Lett. 58, 128 (2004)CrossRef
Aksoy, S., Caglar, Y., Ilican, S., Caglar, M., Int. J. Hydrogen Energy 34, 51915195 (2009)CrossRef
Saha, B., Thapa, R., Chattopadhyay, K.K., Solar Energy Mater. Solar Cells 92, 10771080 (2008)CrossRef
Hubermier, H.U., Thin Solid Films 80, 157 (1981)CrossRef
Haacke, G., J. Appl. Phys. 47, 4086 (1976)CrossRef
Moholkar, A.V., Agawane, G.L., Sim, K.-U., Kwon, Y.-B., Rajpure, K.Y., Kim, H.J., Appl. Surf. Sci. 257, 93101 (2010)CrossRef