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The effect of temperature of operation on the turn-on time delay of semiconductor lasers: full analytical and exact expression form

Published online by Cambridge University Press:  05 February 2008

M. R. Hassan
M. R. Hassan*
Affiliation:
Department of Electrical Engineering, College of Engineering, University of Basrah, Basrah, Iraq
*
[email protected]
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Abstract

In this paper, the effect of temperature of operation on the turn-on time delay, t d , of semiconductor laser has been re-studied theoretically. We derived a full analytical and exact expression to determine t d in terms of nonradiative, radiative, Auger recombination coefficients, cavity dimensions, threshold carrier density (and in turn threshold current density), injected current and temperature of operation. The temperature dependence (TD) of t d was calculated through the TD of threshold carrier density. The TD of threshold carrier density was calculated according to the TD of cavity parameters and not by the well-known exponential Pankove relation via the use of characteristics temperature and current. A complete agreement between the values of t d calculated by our proposed model and the numerical method, was shown through the simulation results.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 1 , January 2008 , pp. 41 - 48
Copyright
© EDP Sciences, 2008

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