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Effect of tellurium substitution in Sn10Sb20Se70−X TeX (0 < X < 12) amorphous chalcogenide system

Published online by Cambridge University Press:  04 July 2009

R. Chander*
Affiliation:
Semiconductor Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar 143005, India
R. Thangaraj
Affiliation:
Semiconductor Laboratory, Department of Applied Physics, Guru Nanak Dev University, Amritsar 143005, India
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Abstract

The as-prepared samples of Sn10Sb20Se $_{70-X}$ TeX chalcogenide system were amorphous as evidenced by X-ray diffraction and Differential scanning calorimetry studies. The different crystalline phases emerged in annealed Sn10Sb20Se $_{70-X}$ TeX samples have been identified. Glass transition temperature T g of the as-prepared samples decreases sharply with tellurium substitution upto 2 at% and then it starts increasing upto 10 at% and decreases again on further substitution of tellurium. The change in glass transition temperature T g has been explained based on bond formation energy of different heteropolar bonds and crystalline phases obtained in the annealed samples with different tellurium contents.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2009

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