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Effect of SHI irradiation on Se-Te-Sn thin films

Published online by Cambridge University Press:  23 August 2006

S. Kumar ,
G. B. V. S. Laxmi ,
M. Husain  and
M. Zulfequar
S. Kumar
Affiliation:
Department of Physics, Jamia Millia Islamia, New Delhi-110025, India
G. B. V. S. Laxmi
Affiliation:
Department of Physics, Jamia Millia Islamia, New Delhi-110025, India
M. Husain
Affiliation:
Department of Physics, Jamia Millia Islamia, New Delhi-110025, India
M. Zulfequar*
Affiliation:
Department of Physics, Jamia Millia Islamia, New Delhi-110025, India
*
[email protected]
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Abstract

We have study the effect of Tin impurity and Swift heavy ion irradiation on the optical properties of the chalcogenide thin films. Thin films are prepared by thermal evaporation technique and irradiated by swift heavy ion beam of 60 MeV Si5+ ion with influence of 5 × 1012 ions/cm2. The SHI induced structural and optical changes in the thin films due to which optical band gap decrease. Reduction of the optical band gap is may be due to increase the defect states near to the band tails in the band gap on irradiation.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 35 , Issue 3 , September 2006 , pp. 155 - 158
Copyright
© EDP Sciences, 2006

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