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Effect of leakage current induced by B+H+ implantationin the isolation process for self passivated GaAlAs/GaInP/ GaAs HBT

Published online by Cambridge University Press:  12 September 2002

R. Bourguiga ,
H. Sik ,
A. Scavennec  and
H. Bouchriha
R. Bourguiga*
Affiliation:
Faculté des Sciences de Bizerte, 7021 Zarzouna-Bizerte, Tunisia Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 1060 Tunis, Tunisia
H. Sik
Affiliation:
OPTO, Groupement d'intérêt économique, route de Nozay, 91461 Marcoussis Cedex, France
A. Scavennec
Affiliation:
OPTO, Groupement d'intérêt économique, route de Nozay, 91461 Marcoussis Cedex, France
H. Bouchriha
Affiliation:
Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 1060 Tunis, Tunisia
*
[email protected]
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Abstract

The excess leakage current due to the ion implantationisolation process used in the fabrication of double mesa Self PassivatedGaAlAs/GaInP/GaAs Heterojunction Bipolar Transistors (SP-HBT) has been investigated.This ion implantation process, used to limit the active emitter length results in a drasticreduction of the current gain. The ideality factor of the recombination current associatedwith the ion implantation has been found to be 1.8, close to the conventional value of 2.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 19 , Issue 3 , September 2002 , pp. 195 - 199
Copyright
© EDP Sciences, 2002

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