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Effect of Ag additive on the photoconductive properties of (Se80Te20)100−xAgx (1 ≤ x ≤ 4) thin films

Published online by Cambridge University Press:  18 August 2011

D. Singh ,
S. Kumar ,
S. Kaur  and
R. Thangaraj
D. Singh*
Affiliation:
Semiconductors Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005, Punjab, India
S. Kumar
Affiliation:
Semiconductors Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005, Punjab, India
S. Kaur
Affiliation:
Semiconductors Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005, Punjab, India
R. Thangaraj*
Affiliation:
Semiconductors Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar 143005, Punjab, India
*
ae-mail: [email protected]
be-mail: [email protected]
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Abstract

Thin films of a (Se80Te20)100−xAgx (1 ≤ x ≤ 4) were prepared by vacuum evaporation technique in a base pressure of 10−5 mbar onto well-cleaned glass substrates. The photoconductive measurements have been carried out on (Se80Te20)100−xAgx (1 ≤ x ≤ 4) thin films at different intensities 0–1200 lx in the temperature range 263–333 K. Dark conductivity (σd) and photoconductivity (σph) increase but the activation energy decreases as Ag concentration increases in the present glass composition. The measurements of intensity dependence of photoconductivity show that the photoconductivity increases with intensity as a power law where the power is found to be between 0.5 and 1.0. The photosensitivity (σph/σd) decreases with increase in Ag concentration. The results are explained on the basis of increase in the density of the localized states.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 3 , September 2011 , 30301
Copyright
© EDP Sciences, 2011

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