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Dispersions of propagating optical phonons and electron-phonon interactions in wurtzite GaN/ZnO quantum wells

Published online by Cambridge University Press:  02 December 2011

W.D. Huang ,
Y.J. Ren ,
C.X. Xia  and
S.Y. Wei
W.D. Huang*
Affiliation:
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
Y.J. Ren
Affiliation:
Department of Physics, Shaanxi University of Technology, Hanzhong 723001, Shaanxi, P.R. China
C.X. Xia
Affiliation:
College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, Henan, P.R. China
S.Y. Wei
Affiliation:
College of Physics and Information Engineering, Henan Normal University, Xinxiang 453007, Henan, P.R. China
*
ae-mail: [email protected]
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Abstract

Based on the dielectric-continuum model and Loudon’s crystal model, the propagating optical phonons and electron-phonon interactions are studied by using the determinate method. The dispersions and electron-phonon coupling functions of the propagating optical phonons are investigated for wurtzite GaN/ZnO single quantum well (QW). The numerical results show that there are infinite propagating phonon branches by a quantum number m in the two regions. The propagating optical phonons are more dispersive for decreasing m. Moreover, the electron-phonon coupling functions have oscillating behavior in barrier layer (GaN), the periods of electron-phonon coupling functions in low frequency region are larger than those in high frequency region. The electron-phonon coupling functions of propagating phonon modes in low frequency region are more important than those in high frequency region.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 57 , Issue 1 , January 2012 , 11301
Copyright
© EDP Sciences, 2011

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