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Dielectric properties of thin insulating layers measuredby Electrostatic Force Microscopy

Published online by Cambridge University Press:  26 February 2010

C. Riedel ,
R. Arinero ,
Ph. Tordjeman ,
M. Ramonda ,
G. Lévêque ,
G. A. Schwartz ,
D. G. de Oteyza ,
A. Alegría  and
J. Colmenero
C. Riedel
Affiliation:
Institut d'Électronique du Sud (IES), UMR CNRS 5214, Université Montpellier II, CC 082, Place E. Bataillon, 34095 Montpellier Cedex, France Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastián, Spain Departamento de Física de Materiales UPV/EHU, Facultad de Química, Apartado 1072, 20080 San Sebastián, Spain
R. Arinero*
Affiliation:
Institut d'Électronique du Sud (IES), UMR CNRS 5214, Université Montpellier II, CC 082, Place E. Bataillon, 34095 Montpellier Cedex, France
Ph. Tordjeman
Affiliation:
Université de Toulouse, INPT – CNRS, Institut de Mécanique des Fluides (IMFT), 1 allée du Professeur Camille Soula, 31400 Toulouse, France
M. Ramonda
Affiliation:
Laboratoire de Microscopie en Champ Proche (LMCP), Centre de Technologie de Montpellier, Université Montpellier II, CC 082, Place E. Bataillon, 34095 Montpellier Cedex, France
G. Lévêque
Affiliation:
Institut d'Électronique du Sud (IES), UMR CNRS 5214, Université Montpellier II, CC 082, Place E. Bataillon, 34095 Montpellier Cedex, France
G. A. Schwartz
Affiliation:
Centro de Física de Materiales (CSIC-UPV/EHU), Materials Physics Center MPC, Edificio Korta, 20018 San Sebastián, Spain
D. G. de Oteyza
Affiliation:
Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastián, Spain
A. Alegría
Affiliation:
Departamento de Física de Materiales UPV/EHU, Facultad de Química, Apartado 1072, 20080 San Sebastián, Spain Centro de Física de Materiales (CSIC-UPV/EHU), Materials Physics Center MPC, Edificio Korta, 20018 San Sebastián, Spain
J. Colmenero
Affiliation:
Donostia International Physics Center, Paseo Manuel de Lardizabal 4, 20018 San Sebastián, Spain Departamento de Física de Materiales UPV/EHU, Facultad de Química, Apartado 1072, 20080 San Sebastián, Spain Centro de Física de Materiales (CSIC-UPV/EHU), Materials Physics Center MPC, Edificio Korta, 20018 San Sebastián, Spain
*
[email protected]
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Abstract

In order to measure the dielectric permittivity of thin insulting layers, we developed a method based on electrostatic force microscopy (EFM) experiments coupled with numerical simulations. This method allows to characterize the dielectric properties of materials without any restrictions of film thickness, tip radius and tip-sample distance. The EFM experiments consist in the detection of the electric force gradient by means of a double pass method. The numerical simulations, based on the equivalent charge method (ECM), model the electric force gradient between an EFM tip and a sample, and thus, determine from the EFM experiments the relative dielectric permittivity by an inverse approach. This method was validated on a thin SiO2 sample and was used to characterize the dielectric permittivity of ultrathin poly(vinyl acetate) and polystyrene films at two temperatures.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 50 , Issue 1: Focus on Electrical Contacts , April 2010 , 10501
Copyright
© EDP Sciences, 2010

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