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Determination of critical island size in para-sexiphenyl islands on SiO2 using capture-zone scaling

Published online by Cambridge University Press:  11 August 2011

S. Lorbek ,
G. Hlawacek  and
C. Teichert
S. Lorbek
Affiliation:
Institute of Physics, University of Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
G. Hlawacek
Affiliation:
Institute of Physics, University of Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
C. Teichert*
Affiliation:
Institute of Physics, University of Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
*
ae-mail: [email protected]

Abstract

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One of the important parameters in understanding the mechanism of the early stage of organic thin-film growth is the critical nucleus size i*. Here, submonolayer films of para-sexiphenyl grown on amorphous silicon dioxide substrates were investigated by means of atomic-force microscopy and have been analyzed using the recently proposed capture-zone scaling. Applying the generalized Wigner surmise we determine from the capture-zone distribution i* at room temperature and 373 K. The results are compared to traditional analysis by island-size scaling and the applicability of the capture-zone scaling is critically discussed with respect to island shape.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 2: International Symposium on Flexible Organic Electronics 2010 (ISFOE) , August 2011 , 23902
Copyright
© EDP Sciences, 2011

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