Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-27T07:23:23.512Z Has data issue: false hasContentIssue false

Design of a new coplanar isolator made from YIG film operating in the X-frequency band

Published online by Cambridge University Press:  28 November 2011

S. Kirouane
Affiliation:
LT2C, Université Jean Monnet, 42000 Saint-Étienne, France
D. Vincent*
Affiliation:
LT2C, Université Jean Monnet, 42000 Saint-Étienne, France
E. Vernet
Affiliation:
LT2C, Université Jean Monnet, 42000 Saint-Étienne, France
O. Zahwe
Affiliation:
LT2C, Université Jean Monnet, 42000 Saint-Étienne, France
B. Payet-Gervy
Affiliation:
LT2C, Université Jean Monnet, 42000 Saint-Étienne, France
A. Chaabi
Affiliation:
Laboratoire des semi-conducteurs et des hyperfréquences, Université Mentouri de Constantine, Route Ain el Bey, Constantine 25000, Algeria
*
Get access

Abstract

The miniaturization of devices and the increase of operating frequencies are two important issues for communication system development. This requires a high degree of integration, higher performance and lower cost. Isolator is an important non-reciprocal passive component for source protection. In most cases, the non-reciprocal effect is based on field displacement phenomenon induced by a magnetized ferrite material. In this paper we propose a new design of a coplanar isolator based on field displacement, composed of a non-symmetrical coplanar transmission line, made from a ferrite layer and ground plane below. Simulations were performed using HFSS software. Measurements were made on a first 1000 μm-thick YIG film sample giving 1 dB of insertion losses and 17 dB isolation and on a second sample made from a 150 μm-thick YIG ferrite sample giving an insertion loss lower than 2 dB. Interesting applications of this isolator structure are considered.

Type
Research Article
Copyright
© EDP Sciences, 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Capraro, S., Rouiller, T., berre, M.L., Chatelon, J.P., Bayard, B., Barbier, D., Rousseau, J.J., IEEE Trans. Compon. Packag. Manufact. Technol. 30 3, 411
Capraro, S., Rouiller, T., Berre, M.L., Chatelon, J.P., Bayard, B., Barbier, D., Rousseau, J.J., Microw. Opt. Technol. Lett. 46, 435 (2005)CrossRef
Hines, M., IEEE Trans. Microwave Theor. Tech. 19, 442 (1971)CrossRef
Wen, C.P., IEEE Trans. Microwave Theor. Tech. 17, 12 (1969)CrossRef
Polder, D., Philos. Mag. 40, 99 (1949)CrossRef
Borburgh, J., Arch. Elec. Ubertrafungs 31, 73 (1977)
Bayard, B., Didier, D., Simovski, C., Noyel, G., IEEE Trans. Microwave Theor. Tech. 51, 1809 (2003)CrossRef
Heinrich, W., IEEE Trans. Microwave Theor. Tech. 41, 45 (1993)CrossRef
Kitazawa, T., Mittra, R., IEEE Trans. Microwave Theor. Tech. 33, 771 (2003)CrossRef
Mao, S.G., Hwang, C.T., Wu, R.B., Chen, C.H., IEEE Trans. Microwave Theor. Tech. 48, 23 (2000)
Kittel, C., Introduction to Solid State Physics, 2nd edn. (Dunod, Paris French, 1970)Google Scholar
Tsutsami, M., Kikui, K., Ueda, T., Characteristics of slot line yittrium iron garnet substrate and its application, in Proceeding of APMC Taipei Taiwan R.O.C., 2001Google Scholar
Tsutsumi, M., Asahara, T., IEEE Trans. Microwave Theor. Tech. 38, 1461 (1990)CrossRef
Vaart, H.V.D., Electron. Lett. 6, 601602 (1970)