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Defect-induced birefringence in crystalline silicon ingots

Published online by Cambridge University Press:  15 July 2004

M. Yamada ,
N. Zui  and
T. Chu
M. Yamada*
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku Kyoto 606-8585, Japan
N. Zui
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku Kyoto 606-8585, Japan
T. Chu
Affiliation:
Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku Kyoto 606-8585, Japan
*
[email protected]
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Abstract

Birefringence induced by crystal defects has been successfully characterized as standard ingot form in Si crystals by using a scanning infrared polariscope. It is found that there is a certain amount of defect-induced birefringence besides the birefringence due to the optical anisotropy in CZ Si crystals. If the infrared probing light is introduced to the crystallographic $\langle100\rangle$ directions, then the defect-induced birefringence is clearly observed with no influence of the optical anisotropy in cubic crystals. Although it is difficult to evaluate the absolute value of crystal defects, it is demonstrated that the SIRP measurement is very useful to nondestructively characterize the quality of Si crystals as standard ingot form without any special treatment.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 155 - 158
Copyright
© EDP Sciences, 2004

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