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Current transport characteristics of pSe-nMoSe2 heterojunction diode

Published online by Cambridge University Press:  30 November 2010

C. K. Sumesh ,
K. D. Patel ,
V. M. Pathak  and
R. Srivastava
C. K. Sumesh*
Affiliation:
Department of Physics, Faculty of Engineering and Technology, CHARUSAT, 388 420 Changa, Anand, India
K. D. Patel
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, Anand, India
V. M. Pathak
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, Anand, India
R. Srivastava
Affiliation:
Department of Physics, Sardar Patel University, Vallabh Vidyanagar, 388 120 Gujarat, Anand, India
*
[email protected]
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Abstract

The characteristics of heterojunction diode pSe-nMoSe2 fabricated from thermally evaporated p-Se films on n-type Molybdenum diselenide (MoSe2) grown by direct vapour transport (DVT) technique have been examined by using current-voltage measurements. To investigate the dark current transport mechanism in pSe-nMoSe2 heterojunctions the current-voltage characteristics were measured in the temperature range 100–300 K. The prepared diode shows a rectification ratio of the order of 103 within the range –2 to 2 V. A multi-step tunnelling model was used to analyze the I-V-T characteristics of the prepared device. The activation energy determined from the saturation current was about 1.16 eV.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 52 , Issue 3 , December 2010 , 30302
Copyright
© EDP Sciences, 2010

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