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Control of the substrate temperature using a triode magnetron sputtering system

Published online by Cambridge University Press:  30 November 2010

D. A. Duarte ,
J. C. Sagás ,
L. C. Fontana ,
A. S. da Silva Sobrinho  and
M. J. Cinelli
D. A. Duarte*
Affiliation:
Santa Catarina State University, Plasmas Physics Laboratory, 89223-100, Joinville, SC, Brazil Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
J. C. Sagás
Affiliation:
Santa Catarina State University, Plasmas Physics Laboratory, 89223-100, Joinville, SC, Brazil Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
L. C. Fontana
Affiliation:
Santa Catarina State University, Plasmas Physics Laboratory, 89223-100, Joinville, SC, Brazil
A. S. da Silva Sobrinho
Affiliation:
Technological Institute of Aeronautics, Plasma Science and Technology Laboratory, 12228-900, S.J. dos Campos, SP, Brazil
M. J. Cinelli
Affiliation:
Santa Catarina State University, Plasmas Physics Laboratory, 89223-100, Joinville, SC, Brazil
*
[email protected]
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Abstract

The bombardment of ions and electrons at the substrate has been studied by varying the magnetic field distribution and the grid-target distance in a triode magnetron sputtering system. The substrate temperature was correlated with the substrate current density and with the type of species bombarding the substrate. The results indicate a possibility to modify and control the bombardment at the substrate surface from predominantly electronic to predominantly ionic, which increases the substrate temperature from 383 K to 473 K, respectively.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 52 , Issue 3 , December 2010 , 31001
Copyright
© EDP Sciences, 2010

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