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The conduction band alignment of HfO2 caused by oxygen vacancies and its effects on the gate leakage current in MOS structures

Published online by Cambridge University Press:  31 August 2007

L. F. Mao ,
Z. O. Wang ,
J. Y. Wang  and
C. Y. Zhu
L. F. Mao*
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
Z. O. Wang
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
J. Y. Wang
Affiliation:
Institute of Microelectronics Peking University, Beijing 100871, P.R. China
C. Y. Zhu
Affiliation:
School of Electronics & Information Engineering, Soochow University, 178 Gan-jiang East Road, Suzhou 215021, P.R. China
*
[email protected]
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Abstract

Based on the first-principles simulations, the oxygen vacancies in the ultrathin HfO2 layer as the gate dielectric in a metal-oxide-semiconductor structure is found to result in the conductionband offset alignment around the vacancy. Thus an increase in the gate leakage current tunneling current comes when the oxygen vacancies appear in the HfO2 layer wherever the oxygen vacancies locate. The relative increase in the tunneling current caused by the oxygen vacancies slightly change with the increasing oxide thickness for a low oxide electric field.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 40 , Issue 1 , October 2007 , pp. 59 - 63
Copyright
© EDP Sciences, 2007

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