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A comparative study of radiation damage on high resistivity silicon
Published online by Cambridge University Press: 15 May 1999
Abstract
In future particle accelerators, silicon detectors will be exposed with large doses of
different types of radiation. To understand the corresponding produced damage
mechanisms, a systematic study of the influence of the irradiation on the silicon from
which the detectors are made has to be carried out. Samples of low n-doped silicon
$(n\leq 10^{12}~{\rm cm}^{-3})$ have been irradiated with swift krypton ions
$(\langle E\rangle=5.2~{\rm GeV})$
, neutrons from a nuclear reactor $(\langle E\rangle
\sim 1~{\rm MeV})$
and energetic electrons $(\langle E\rangle=1.5~{\rm MeV})$
.
Resistivity and Hall effect measurements performed after irradiation show that the
silicon is changed to a quasi-intrinsic state, characterized by a very high
resistivity. The electrically active defects responsible for that evolution are Maynly
acceptor centers, namely divacancy and/or vacancy-doping complexes. Besides, for the
highest fluences, only the appearance of a donor center located at about 0.59 eV
below the conduction band may explain the observed stabilization of the Fermi level at
0.61 eV. Finally, using a simulation method, the rates of generation of the different
defects are estimated.
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- Research Article
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- © EDP Sciences, 1999
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