The multilayered films-based charge trap flash memory cells were fabricated by incorporating high-k ZrO2/Al2O3 nanolaminates as charge trapping layer and amorphous Al2O3 as tunneling and blocking layers. The thickness of high-k ZrO2 or Al2O3 film in charge trapping layer after annealing treatment was about 1.5 nm for each layer. The charge storage characteristics of such memory cells were measured, and the results demonstrated that they had a large hysteresis memory window of 3.85 V at a sweeping gate voltage of ±8 V, an excellent endurance up to 105 write/erase cycles and a small charge loss of 9.6% after 10 years.