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Backside failure analysis of GaAs MMIC ASICs

Published online by Cambridge University Press:  15 July 2004

F. Beaudoin ,
D. Carisetti ,
J. C. Clement ,
R. Desplats  and
P. Perdu
F. Beaudoin*
Affiliation:
THALES Microelectronics, CNES-THALES Laboratory, BPI 1414, 18 avenue Edouard Belin, 31401 Toulouse Cedex 9, France
D. Carisetti
Affiliation:
THALES Research and Technology, L'orée de Corbeville, BP 56, 91404 Orsay, France
J. C. Clement
Affiliation:
THALES Research and Technology, L'orée de Corbeville, BP 56, 91404 Orsay, France
R. Desplats
Affiliation:
CNES, BPI 1414, 18 avenue Edouard Belin, 31401 Toulouse Cedex 9, France
P. Perdu
Affiliation:
CNES, BPI 1414, 18 avenue Edouard Belin, 31401 Toulouse Cedex 9, France
*
[email protected]
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Abstract

A case study of backside failure analysis is performed on failed MMIC ASIC devices sealed in SOP packages. The use of Benzocyclobutene (BCB) as a dielectric material, which is etched during wet etch front-side decapsulation, motivated the proposed backside approach. Due to the transparency of the GaAs substrate to near infrared wavelengths, innovative optical defect localization techniques can be used. In this paper we present the successful application of Thermal Laser Stimulation (OBIRCH, TIVA) to rapidly, non-destructively and precisely localize the defects through the GaAs substrate. Backside delayering allowing defect observation and revelation is also discussed. Finally, an electrical interpretation of the failure and the corrective actions are presented.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 475 - 477
Copyright
© EDP Sciences, 2004

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References

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