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Atomic-scale analysis of interfaces in an all-oxide magnetic tunnel junction

Published online by Cambridge University Press:  03 October 2003

J.-L. Maurice*
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
F. Pailloux
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
D. Imhoff
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
N. Bonnet
Affiliation:
UMR-S INSERM 514 and LERI, University of Reims, 51092 Reims Cedex, France
L. Samet
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
A. Barthélémy
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
J.-P. Contour
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
C. Colliex
Affiliation:
Laboratoire de Physique des Solides, Université Paris-Sud, 91405 Orsay, France
A. Fert
Affiliation:
Unité Mixte de Physique CNRS/Thales, 91404 Orsay, France
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Abstract

We use High Resolution Electron Microscopy (HRTEM)together with Electron Energy Loss Spectroscopy (EELS) to analyzethe crystallography and the chemical configuration of interfacesin a state-of-the-artLa2/3Sr1/3MnO3/SrTiO3/La2/3Sr1/3MnO3tunnel junction. EELS indicates that manganese ions keep theirbulk valency up to the last atomic plane in contact with theinsulator. Tunnel magnetoresistance however decreases withtemperature faster than magnetisation in these samples.Quantitative HRTEM reveals some local departures from chemicalabruptness at the interfaces, which could play a role in thisdecrease.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2003

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References

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