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Atom probe tomography in nanoelectronics

Published online by Cambridge University Press:  26 September 2014

Didier Blavette  and
Sébastien Duguay
Didier Blavette*
Affiliation:
Normandie University, Groupe de Physique des Matériaux, UMR CNRS 6634, ESP CARNOT Institute, 76800 St. Etienne du Rouvray Cedex, France
Sébastien Duguay
Affiliation:
Normandie University, Groupe de Physique des Matériaux, UMR CNRS 6634, ESP CARNOT Institute, 76800 St. Etienne du Rouvray Cedex, France
*
ae-mail: [email protected]

Abstract

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The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants and nanostructural features that are vital for nanoelectronics. Because of trajectory aberrations, APT images are subjected to distortions and local composition at the nm scale may either be biased. Procedures accounting for these effects were applied so that to correct images.

Type
Review Article
Information
The European Physical Journal - Applied Physics , Volume 68 , Issue 1 , October 2014 , 10101
Copyright
© EDP Sciences, 2014

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