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Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures
Published online by Cambridge University Press: 15 July 2004
Abstract
In this communication, results are presented of the application of etching
in molten E+M etch (KOH-NaOH eutectic mixture with 10% MgO) for studying
defects in GaN. The method was used to study defects on differently oriented
cleavage and basal planes of GaN single crystals, MOCVD-, MBE- and HVPE-grown
epitaxial layers and LD and LED structures.
Dislocations, dislocation loops and stacking faults have been revealed on
$(10\, \bar{\text{\scriptsize 1}}\, 0)$, $(1\,\bar{\text{\scriptsize 2}}\,10)$
and $\{0001\}$
Ga- and N-polar planes. Diversified etch pit morphology was
observed depending on the crystallographic orientation of the etched samples
and was correlated with the crystallographic symmetry of the GaN lattice.
Etching results were calibrated using TEM analysis.
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- Research Article
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- © EDP Sciences, 2004
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