Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-26T15:56:56.515Z Has data issue: false hasContentIssue false
  • English
  • Français

An analytical study of hot-carrier degradation effectsin sub-micron MOS devices

Published online by Cambridge University Press:  29 April 2008

A. K. Singh
A. K. Singh*
Affiliation:
Senior Lecturer Faculty of Engineering and Technology Multimedia University, Melaka Campus, Melaka, Malaysia
*
[email protected]
Get access

Abstract

In this present communication, we have studied the effect of hot-carrier degradation effects on surface potential, threshold voltage and DIBL of the sub-micron device. We have derived a more accurate model for the threshold voltage in the presence of hot carrier degradation effect. Our model includes a fitting parameter to take care of short channel effects. The validity of our model is verified by the MINIMOS simulator results. Our analysis predicts that the minimum potential position along the channel is not affected by the sign of the hot carrier induced localized interface charge density and always occurs in damage free region. DIBL effect is more pronounced in submicron devices in the presence of the hot carrier degradation effect.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 42 , Issue 2 , May 2008 , pp. 87 - 94
Copyright
© EDP Sciences, 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Liu, Z.-H., Hu, C., Heng, J.-H., Chan, T.-Y., Jeng, M.-C., Ko, P.K., Cheng, Y.C., IEEE Trans. Electron Devices 40, 86 (1993) CrossRef
Banna, S.R., Chan, P.C.H., Ko, P.K., Nguyen, C.T., Chan, M., IEEE Trans. Electron Devices 42, 1949 (1995) CrossRef
Vaidyanaath, G., Singh, A.K., Eur. Phys. J. B 42, 113 (2004) CrossRef
Hsu, F.C., Chiu, K.Y., IEEE Trans. Electron Devices 32, 394 (1985)
Mistry, K., Doyle, B.S., IEEE Electron Device Lett. 10, 500 (1989) CrossRef
Chung, J.E., Ko, P.-K., Hu, C., IEEE Trans. Electron Devices 38, 1362 (1991) CrossRef
Kurachi, I. , Hwang, N. , Forbes, L., IEEE Trans. Electron Devices 41, 964 (1994) CrossRef
Hot Electron, Induced MOS transconductance degradation, in proceedings of IEEE Hong Kong Electron Devices Meeting (1995), 10
Physics and Modeling of Hot Electron Effects in Submicron Devices, Physics B+C (Amsterdam 1985), Vol. 134, p. 1
Tradeoffs in Submicron CMOS process Design (Semicond. Int., 1991), Vol. 14, 146
E. Takeda, C.Y. Yang, A.M. Hamada, Hot-carrier effects in MOS devices (Academic Press, 1995)
Jean, Y.S., Wu, C.Y. , IEEE Trans. Electron Devices 44, 441 (1997) CrossRef
F. Kacer, A. Kuntman , in Proceedings of 13th Intl. Conf. Microelectronics, Morocco (2001), 29, 43
A. Bouhdada, R. Marrakh, in Proceedings of 13th Intl. Conf. Microelectronics, Morocco (2001), 29, 27
Ho, C.S., Huang, K.Y., Tang, M., Liou, J.J., Microelectron. Reliability 45, 1144 (2005) CrossRef