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Aluminum gettering in photovoltaic silicon

Published online by Cambridge University Press:  15 July 2004

J. Chen ,
D. Yang ,
X. Wang ,
D. Que  and
M. Kittler
J. Chen
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P.R. China
D. Yang*
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P.R. China
X. Wang
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P.R. China
D. Que
Affiliation:
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, P.R. China
M. Kittler
Affiliation:
IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
*
[email protected]
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Abstract

The effect of aluminum gettering on different silicon materials used for solar cells has been investigated by means of microwave photoconductivity decay (μ-PCD) and electron beam induced current (EBIC). μ-PCD measurement revealed that the lifetime of multicrystalline silicon (mc-Si) with a lower initial lifetime could be increased by high temperature gettering (1000 °C), while that of mc-Si with a higher initial lifetime could not be increased, but was even degraded. EBIC results revealed that no significant improvement of diffusion length was observed in both contaminated and uncontaminated wafers, while 850 °C Al gettering was employed. It is concluded that both the initial material quality and the thermal treatment have influences on the effect of Al gettering. In addition, dislocations with bright EBIC contrast were discovered in annealed mc-Si wafers, the origin of which is discussed.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 119 - 122
Copyright
© EDP Sciences, 2004

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