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AFM-utilizing approach to search for new oxide materials for perspective applications in memristive devices

Published online by Cambridge University Press:  25 May 2012

I. Batko
Affiliation:
Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01 Košice, Slovakia
M. Batkova*
Affiliation:
Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 040 01 Košice, Slovakia
*
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Abstract

Test structures of memristive devices were prepared by tip-induced oxidation of thin titanium films using atomic force microscope. Electrical measurements of such Ti/TiOx/Ti devices confirmed their memristive behavior and inferred presence of diffusion processes in the TiOx barrier. Consequent Kelvin probe force microscopy studies provided evidence for the diffusion processes as well as for expected electricfield-induced ionic/charge redistribution in the oxide barrier. Time evolution of the surface potential due to the diffusion processes in the TiOx barrier revealed minute-scale (at least) retention times of the devices. The work presents a widely utilizable approach to search for novel oxide materials for perspective memristive applications as well as alternative technology for fabrication of memristive nanodevices in geometry favoring advantageous scanning probe microscopy studies of their in-barrier processes.

Type
Research Article
Copyright
© EDP Sciences, 2012

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References

Chua, L.O., IEEE Trans. Circuit Theory ct-18, 507 (1971)CrossRef
Pershin, Y.V., Ventra, M.D., Adv. Phys. 60, 145 (2011)CrossRef
Chua, L.O., Kang, S.M., Proc. IEEE 64, 209 (1976)CrossRef
Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S., Nature 453, 80 (2008)CrossRef
Yang, J.J., Pickett, D.M., Li, X., Ohlberg, A.D., Stewart, R.D., Williams, R.S., Nature Nanotechnol. 3, 429 (2008)CrossRef
Kwon, D.H., Kim, K.M., Jang, J.H., Jeon, J., Lee, M.H., Kim, G.H., Li, X.S., Park, G.S., Lee, B., Han, S., Kim, M., Hwang, C.S., Nature Nanotechnol. 5, 148 (2010)CrossRef
Strachan, J.P., Strukov, D.B., Borghetti, J., Joshua Yang, J., Medeiros-Ribeiro, G., Stanley Williams, R., Nanotechnology 22, 254015 (2011)CrossRef
Xia, Q., Pickett, M.D., Yang, J.J., Zhang, M.-X., Borghetti, J., Li, X., Wu, W., Medeiros-Ribeiro, G., Williams, R.S., Nanotechnology 22, 254026 (2011)CrossRef
Robinett, W., Pickett, M., Borghetti, J., Xia, Q., Snider, G., Medeiros-Ribeiro, G., Williams, R.S., Nanotechnology 21, 235203 (2010)CrossRef
Medeiros-Ribeiro, G., Perner, F., Carter, R., Abdalla, H., Pickett, M.D., Williams, R.S., Nanotechnology 22, 095702 (2011)CrossRef
Waser, R., Aono, M., Nature Mater. 6, 833 (2007)CrossRef
Yang, J.J., Borghetti, J., Murphy, D., Stewart, D.R., Williams, R.S., Adv. Mat. 21, 3754 (2009)CrossRef
Strachan, J.P., Pickett, M.D., Yang, J.J., Aloni, S., David Kilcoyne, A.L., Medeiros-Ribeiro, G., Stanley Williams, R., Adv. Mat. 22, 3573 (2010)CrossRef
Szot, K., Rogala, M., Speier, W., Klusek, Z., Besmehn, A., Waser, R., Nanotechnology 22, 254001 (2011)CrossRef
Yang, J.J., Feng, M., Pickett, M.D., Ohlberg, D.A.A., Stewart, D.R., Chun, L.N., Williams, R.S., Nanotechnology 20, 215201 (2009)CrossRef
Snow, E.S., Campbell, P.M., McMarr, P.J., Nature 63, 749 (1993)
Irmer, B., Kehrle, M., Lorenz, H., Kotthaus, J.P., Appl. Phys. Lett. 71, 1733 (1997)CrossRef
Matsumoto, K., Proc. IEEE 85, 612 (1997)CrossRef
Nonnenmacher, M., O’Boyle, M.P., Wickramasinghe, H.K., Appl. Phys. Lett. 58, 2921 (1991)CrossRef
Melitz, W., Shen, J., Kummel, A.C., Lee, S., Surf. Sci. Rep. 66, 1 (2011)CrossRef
Šoltýs, J., Cambel, V., Fedor, J., Acta Phys. Pol. A 3103, 553 (2003)CrossRef
Blanc, J., Staebler, D.L., Phys. Rev. B 4, 3548 (1971)CrossRef
Chang, T., Jo, S.-H., Kim, K.-H., Sheridan, P., Gaba, S., Lu, W., Appl. Phys. A 102, 857 (2011)CrossRef
Biolek, Z., Biolek, D., Biolková, V., Radio Eng. 18, 210 (2009)
Strukov, D.B., Williams, R.S., Appl. Phys. A 94, 515 (2008)CrossRef
Jeong, D.S., Schroeder, H., Breuer, U., Waser, R., J. Appl. Phys. 104, 123716 (2008)CrossRef
Cho, B.J., Jeong, D.S., Kim, S.K., Rohde, C., Choi, S., Oh, J.H., Kim, H.J., Hwang, C.S., Szot, K., Waser, R., Reichenberg, B., Tiedke, S., J. Appl. Phys. 98, 033715 (2005)CrossRef
Jeong, D.S., Schroeder, H., Waser, R., Electrochem. Solid-State Lett. 10, G51 (2007)CrossRef
Gibbons, J.F., Beadle, W.E., Solid-State Electron. 7, 785 (1964)CrossRef
Hickmott, T.W., J. Vac. Sci. Technol. 6, 828 (1969)CrossRef
Szot, K., Speier, W., Bihlmayer, G., Waser, R., Nat. Mater. 5, 312 (2006)CrossRef
Oligschlaeger, R., Waser, R., Meyer, R., Karthauser, S., Dittmann, R., Appl. Phys. Lett. 88, 042901 (2006)CrossRef