Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-25T16:52:22.501Z Has data issue: false hasContentIssue false
  • English
  • Français

ZnO/PS/p-Si heterojunction properties

Published online by Cambridge University Press:  05 June 2014

Uday Muhsin Nayef ,
Mohammed Waleed Muayad  and
Haider Amer Khalaf
Uday Muhsin Nayef
Affiliation:
Department of Applied Science, University of Technology, 9183 Baghdad, Iraq
Mohammed Waleed Muayad*
Affiliation:
Department of Applied Science, University of Technology, 9183 Baghdad, Iraq
Haider Amer Khalaf
Affiliation:
Department of Applied Science, University of Technology, 9183 Baghdad, Iraq
*
ae-mail: [email protected]
Get access

Abstract

In this paper porous silicon (PS) has been prepared by electrochemical etching technique and then ZnO thin film deposition on PS by spray pyrolysis method, the study of AFM show improve the structural stability of the PS substrate with crystalline growth of ZnO thin film. PL spectra explained a blue-shifting in PS layer come from oxidation the surface of PS after coating with ZnO film, Raman measurement show quantum confinement in PS layers with decreasing in variation mode of ZnO film, and the J-V characteristic show increasing in resistivity of Al/ZnO/PS/c-Si/Al due to increasing in depletion layer junction compere with PS layer.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 66 , Issue 2 , May 2014 , 20104
Copyright
© EDP Sciences, 2014

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Kohler, M., Fritzsche, W., Nanotechnology (Wiley-VCH, Weinheim, Germany, 2004)CrossRefGoogle ScholarPubMed
Smith, R., Collins, S., J. Appl. Phys. 71, R1 (1992)CrossRef
Bisi, O., Ossicini, S., Pavesi, L., Surf. Sci. Rep. 38, 1 (2000)CrossRef
Basak, M., Mater. Res. Bull. 42, 875 (2007)
Singh, R.G., Singh, F., Agarwal, V., Mehra, R.M., J. Phys. D 40, 3090 (2007)CrossRef
Fan, S.S., Chapline, M.G., Franklin, N.R., Tombler, T.W., Cassell, A.M., Dai, H.J., Sci. J. 283, 512 (1999)CrossRef
Thahab, S.M., Opt. Adv. Mat. 5, 1107 (2011)
Izni, N., Tankikawa, M., Mahmood, M.R., Yasui, K., Hashim, A.M., Mater. J. 5, 2817 (2013)
Salman, K.A., Omar, K., Hassan, Z., Sol. Energy J. 86, 541 (2011)CrossRef
Lartsev, A.V., Gayduchenko, I.A., Timoshenko, V.Y., Microelectron. Eng. J. 90, 96 (2012)