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Ultrafast transport transient in photoexcited ZnSe

Published online by Cambridge University Press:  09 April 2008

C. G. Rodrigues
C. G. Rodrigues*
Affiliation:
Departamento de Matemática e Física, Universidade Católica de Goiás, Caixa Postal 86, 74605-010, Goiânia, Goiás, Brazil
*
[email protected]
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Abstract

A theoretical study (by using the Nonequilibrium StatisticalOperator Method) is performed on the ultrafast transient transportproperties of photoexcited carriers in ZnSe subjected to electricfields up to 35 kV/cm. The electron and hole drift velocityevolution towards the steady state present maxima in subpicosecondscale.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 41 , Issue 3 , March 2008 , pp. 201 - 204
Copyright
© EDP Sciences, 2008

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