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Synthesis and properties of 10% Zn layered CdTe thin films by SEL method

Published online by Cambridge University Press:  28 September 2011

S. Shanmugan*
Affiliation:
Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800 Penang, Malaysia
D. Mutharasu
Affiliation:
Nano Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia (USM), 11800 Penang, Malaysia
*
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Abstract

Te/Cd/Te/Zn/Cd stacked layers were prepared by Stacked Elemental Layer (SEL) Method. All stacks were annealed from 200 °C to 500 °C and the prepared films were confirmed as polycrystalline nature. Cubic CdTe and Hexagonal ZnTe were identified at high annealing temperature. Transmittance spectra emphasized the significance of Zn doping by annealing the stack. The calculated optical constants n and k were 1.52–2.45 and 0.07–0.36 respectively. The band gaps (Eg) were observed between 1.38 and 1.44 eV at above 350 °C. A uniform surface morphology could be observed at high annealing temperatures. The observed results encouraged the Zn doping using SEL method.

Type
Research Article
Copyright
© EDP Sciences, 2011

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