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Substrate-plasma interaction during amorphous silicon thin films growth by sputtering technique

Published online by Cambridge University Press:  12 June 2009

F. Khelfaoui  and
M. S. Aida
F. Khelfaoui
Affiliation:
Laboratoire de Couches Minces et Interfaces, Faculté des Sciences Exactes, Université de Constantine, 2500 Constantine, Algeria
M. S. Aida*
Affiliation:
Laboratoire de Couches Minces et Interfaces, Faculté des Sciences Exactes, Université de Constantine, 2500 Constantine, Algeria
*
[email protected]
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Abstract

The present paper deals with the investigation of Argon ions – substrate interactions during film growth and their influence on sputtered hydrogenated amorphous silicon (a-Si:H) thin films structural properties. These interactions are characterized by mean of the calculation of the energy distribution of Ar ions striking the substrate and their striking force measurement in the case of Rf diode sputtering. The influence of the Ar ions bombardment on structural and physical properties of amorphous silicon thin properties is discussed. The ion bombardment affects the film growth processes and consequently, it causes films densification and evolution of film microstructure from amorphous state at low power towards a microcrystalline material with increasing the Rf power.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 47 , Issue 3 , September 2009 , 31001
Copyright
© EDP Sciences, 2009

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References

Moustakas, T.D., Paul, W., Phys. Rev. B 16, 1564 (1977) CrossRef
Freeman, E.C., Paul, W., Phys. Rev. B 20, 716 (1979) CrossRef
Ross, R.C., Messier, R., J. Appl. Phys. 52, 5329 (1981) CrossRef
Pinarbasi, M., Maley, N., Meyers, A., Abelson, J.R., Thin Solid Films 171, 217 (1989) CrossRef
Tardy, D.J., Poitevin, J.M., Lemperière, G., J. Phys. D 14, 339 (1981) CrossRef
Chittick, R.C., Alexander, J.H., Stering, H.F., J. Electrochem. Soc. 116, 77 (1969) CrossRef
Madan, A., Ovshinsky, S.R., Benn, E., Phil. Mag. 40, 259 (1979) CrossRef
Spear, W.E., LeComber, P.G., Solid State Commun. 17, 1193 (1975) CrossRef
C. Knight, in The physics of Hydrogenated Amorphous Silicon, edited by J.D. Joannopoulous, G. Lucovsky (Springer-Verlag, Berlin, 1984), and references therein
Pool, F.S., Essick, J.M., Shing, Y.H., Mather, R.T., Mater. Res. Soc. Symp. Proc. 258, 173 (1992) CrossRef
Goto, M., Oyoda, H.T., Nishitani, M., Kitagawa, M., Yamazoe, H., Sugai, H., J. Appl. Phys. Jpn 36, 3714 (1977) CrossRef
Gu, J.D., Chen, P.L., Thin Solid Films 498, 14 (2006) CrossRef
Street, R.A., Knights, J.C., Biegelson, D.K., Phys. Rev. B 35, 1880 (1978) CrossRef
Tsai, C.C., Knights, J.C., Chang, G., Wacker, B., J. Appl. Phys. 59, 2998 (1986) CrossRef
Rocca, P., Cabarrocas, I., Bouziem, Y., Theye, M.L., Phil. Mag. B 65, 1025 (1992)
J. Perrin, Ph.D. thesis, Paris VII, 1983
Drevillon, B., Perrin, J., Siffert, J.M., Huc, J., Lloret, A., de Rosny, G., Shmitt, J.P.M., Appl. Phys. Lett. 42, 801 (1983) CrossRef
Aida, M.S., Rahmane, S., Thin Solid Films 288, 83 (1996) CrossRef
Manuel Technique Céramiques Piezoélectiques PXE, RTC (Paris, 1981)
Coburn, J.W., Key, E., J. Appl. Phys. 43, 4965 (1972) CrossRef
Aida, M.S., J. Non-Cryst. Solids 160, 99 (1993) CrossRef
M.J. Thompson, in The physics of Hydrogenated Amorphous Silicon, Vol. I, edited by J.D. Joannopoulos, G. Lukovsky (Springer, New York, 1984), p. 132