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Study of traps in polydiacetylene based devices using TSC technique *
Published online by Cambridge University Press: 06 December 2006
Abstract
Trap parameters in poly(1-(3,4-difluorophenyl)-2-(4-pentylcyclohexylphenyl)acetylene) (PDPA-2F) based devices have been investigated by using the thermally stimulated current (TSC) technique. The device structure is ITO-PEDOT-(PDPA-2F)-M, where M stands for the cathode metal (Al, Ca/Al, and Au). The results reveal at least three TSC peaks in devices denoted as peaks A, B and C. Comparing trap parameters in ITO-PEDOT-(PDPA-2F)-Au hole-only device and ITO-PEDOT-(PDPA-2F)-Ca Al (Al) bipolar devices, we assigned A and B trap types to hole-like traps and C type traps to electron-like traps. The trap densities are in the range of 1015−1017 cm−3 and the trap levels are 0.12 eV (A type traps), 0.36 eV (B type traps), and 0.25 eV (C type traps).
- Type
- Research Article
- Information
- The European Physical Journal - Applied Physics , Volume 36 , Issue 3 , December 2006 , pp. 215 - 218
- Copyright
- © EDP Sciences, 2006
Footnotes
This paper has been presented at “ECHOS06”, Paris, 28–30 juin 2006.
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