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Study of indium phosphide wafers treated by long time annealing at high temperatures
Published online by Cambridge University Press: 15 July 2004
Abstract
High purity InP crystals were grown by liquid encapsulated Czochralski method from undoped InP melt. Wafers from the grown crystals were annealed in phosphorus ambient for 95 hours at 950 °C and cooled slowly. Conversion to semi-insulating state by annealing was studied by temperature dependent Hall measurements and low temperature optical absorption spectroscopy.
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- © EDP Sciences, 2004
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