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A spectroscopic charge pumping model in spice for the low dimensional MOSFET's

Published online by Cambridge University Press:  15 January 2002

M. Kahouadji  and
F. Djahli
M. Kahouadji*
Affiliation:
Institute of Electronics, University of Bejaia, 06000 Bejaia, Algeria
F. Djahli
Affiliation:
Institute of Electronics, University of Bejaia, 06000 Bejaia, Algeria
*
[email protected]
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Abstract

We have simulated the experimental spectroscopic charge pumping technique by the implementation of a model in the electrical simulator SPICE3F4. This model takes into account the temperature effect on the geometrical and electrical parameters of the studied transistor. The simulated results are in a good agreement with recent and different experimental results.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 17 , Issue 1 , January 2002 , pp. 35 - 39
Copyright
© EDP Sciences, 2002

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References

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