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Simulation of I-V characteristics of organic thin film transistor: Application to the dihexylquaterthiophene

Published online by Cambridge University Press:  15 May 2001

R. Bourguiga ,
F. Garnier ,
G. Horowitz ,
R. Hajlaoui ,
P. Delannoy ,
M. Hajlaoui  and
H. Bouchriha
R. Bourguiga*
Affiliation:
Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia Laboratoire de Physique de la Matière Condensée, Groupe Matériaux Moléculaires et Polymères, Campus Universitaire, 1060 Tunis, Tunisia
F. Garnier
Affiliation:
Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France
G. Horowitz
Affiliation:
Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France
R. Hajlaoui
Affiliation:
Laboratoire des Matériaux Moléculaires, CNRS, 2 rue Henry-Dunant, 94320 Thiais, France
P. Delannoy
Affiliation:
Groupe de Physique des Solides, Université Paris 7, Denis Diderot, 75251 Paris Cedex 05, France
M. Hajlaoui
Affiliation:
Laboratoire de Physique de la Matière Condensée, Groupe Matériaux Moléculaires et Polymères, Campus Universitaire, 1060 Tunis, Tunisia
H. Bouchriha
Affiliation:
Laboratoire de Physique de la Matière Condensée, Groupe Matériaux Moléculaires et Polymères, Campus Universitaire, 1060 Tunis, Tunisia
*
[email protected]
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Abstract

Metal-Insulator-Semiconductor Field-Effect-Transistors based on Dihexyl- quaterthiophene (DH4T), has been realized. Unlike conventional MISFET, these devices work through the modulation of an accumulation layer at the semiconductor-insulator interface. An analytical model that describes the operation of organic thin-film-transistors based on a simple trap distribution, with a single shallow trap level located between the valence-band edge and the Fermi level, has been used to determine some microscopic parameters such as the mobility, the density of traps and the corresponding level of traps.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 14 , Issue 2 , May 2001 , pp. 121 - 125
Copyright
© EDP Sciences, 2001

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