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Reverse leakage mechanisms of liquid metal contacts onto II–VI group semiconductor (Ga/p-WSe2)

Published online by Cambridge University Press:  30 April 2013

Achamma Bobby ,
Partha Sarathi Gupta  and
Bobby Kachappilly Antony
Achamma Bobby*
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
Partha Sarathi Gupta
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
Bobby Kachappilly Antony
Affiliation:
Department of Applied Physics, Indian School of Mines, Dhanbad 826 004, India
*
ae-mail: [email protected]
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Abstract

The reverse leakage current mechanisms of Schottky diodes prepared using liquid gallium on as-grown and cleaved tungsten diselenide surfaces were investigated by current-voltage method for the first time. The major leakage mechanism has been identified as tunneling current along with a small contribution of thermionic emission current. The leakage tunneling current is found to be predominant in uncleaved diode compared to that in cleaved one. This is related to the magnitude of interface state density and interfacial inhomogeneities. The inhomogeneous nature of the interface of the fabricated diodes is ascribed to be the reason behind its soft reverse characteristics.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 62 , Issue 2 , May 2013 , 20104
Copyright
© EDP Sciences, 2013

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