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Resistance and 1/f noise between circular contacts on conductive thin films

Published online by Cambridge University Press:  22 February 2011

C. Liang ,
L. K.J. Vandamme ,
G. Leroy  and
J. Gest
C. Liang*
Affiliation:
Université Lille Nord de France, 59000 Lille, France Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 50 rue F. Buisson, BP 717, 62228 Calais, France
L. K.J. Vandamme
Affiliation:
Eindhoven University of Technology, Department of Electrical Engineering PT 913, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
G. Leroy
Affiliation:
Université Lille Nord de France, 59000 Lille, France Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 50 rue F. Buisson, BP 717, 62228 Calais, France
J. Gest
Affiliation:
Université Lille Nord de France, 59000 Lille, France Unité de Dynamique et Structure des Matériaux Moléculaires, Université du Littoral Côte d'Opale, 50 rue F. Buisson, BP 717, 62228 Calais, France
*
[email protected]
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Abstract

There is a need to characterize the quality of contacts and the noise properties of new materials deposited or grown as thin films. Poor contacts are interface dominated. Perfect contacts have a negligible interface contribution and there is only a resistance and noise contribution from outside the contact region. The presence of current crowding enhances the resistance and noise contribution. Such contacts are called constriction dominated contacts. The conductive film is characterized by its sheet resistance and normalized conductance fluctuations for a unit surface. The resistance and noise is studied between two circular top electrodes of the same diameter on the conductive. To distinguish between perfect and poor contacts and to characterize the thin film in case of good contacts, we need a set of contacts with different diameters.Models for perfect and poor contacts are investigated. The scaling of resistance and noise with contact radius r is for interface dominated poor contacts: R i $\propto$ 1/r 2 and S Ri $\propto$ 1/r 6. In contrast, perfect contacts with contact diameter (2r) much smaller than the distance between the centers (2b) show: R c $\propto$ ln(b/r) and S Rc $\propto$ 1/r 2. From the resistance and noise measurements between constriction dominated perfect contacts, the sheet resistance and normalized noise of the thin film are calculated.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 53 , Issue 3: Focus on Telecom 2009 & JFMMA , March 2011 , 30301
Copyright
© EDP Sciences, 2011

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