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Redistribution of Ni implanted into InP

Published online by Cambridge University Press:  15 February 2001

T. K. Chini ,
S. K. Ghose ,
B. Rout ,
B. N. Dev ,
M. Tanemura  and
F. Okuyama
T. K. Chini*
Affiliation:
Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Calcutta 700064, India
S. K. Ghose
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
B. Rout
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
B. N. Dev
Affiliation:
Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005, India
M. Tanemura
Affiliation:
Nagoya Institute of Technology, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
F. Okuyama
Affiliation:
Nagoya Institute of Technology, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466, Japan
*
[email protected]
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Abstract

The redistribution of Ni in InP is studied by annealing samples of InP implanted with 0.9 MeV Ni at 60o angle of ion incidence with respect to target surface normal as a function of dose (8.5×1012−4.5×1015 cm−2). Ni profiles are measured by secondary ion mass spectrometry (SIMS) and implantation induced damage by Rutherford backscattering spectrometry in channeling (RBS/C) condition. The highest dose sample is characterised by remarkable Ni accumulation near the surface (at ∼$0.3R_{\rm np}$) that has not been observed earlier along with two other distinct accumulation zones at Rnp+$\Delta R_{\rm np}$ and $2.2R_{\rm np}$ after annealing at 650 °C for 30 min. Here, Rnp is the normal component of the projected range for oblique angle bombardment.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 13 , Issue 2 , February 2001 , pp. 83 - 87
Copyright
© EDP Sciences, 2001

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