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Raman scattering characterization of residual strain and alloy composition in bulk Si1−xGex crystal

Published online by Cambridge University Press:  15 July 2004

M. R. Islam ,
M. Yamada ,
N. V. Abrosimov ,
M. Kiyama  and
M. Tatsumi
M. R. Islam*
Affiliation:
Division of Information and Production Science, Graduate School of Engineering and Science, Kyoto Institute of Technology, Matsugasaki Sakyo-ku, Kyoto 606-8585, Japan
M. Yamada
Affiliation:
Division of Information and Production Science, Graduate School of Engineering and Science, Kyoto Institute of Technology, Matsugasaki Sakyo-ku, Kyoto 606-8585, Japan Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki Sakyo-ku, Kyoto 606-8585, Japan
N. V. Abrosimov
Affiliation:
Institute of Crystal Growth, Max-Born-Straβe 2, D-12489 Berlin, Germany
M. Kiyama
Affiliation:
Division of Information and Production Science, Graduate School of Engineering and Science, Kyoto Institute of Technology, Matsugasaki Sakyo-ku, Kyoto 606-8585, Japan Advanced Materials R & D Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664, Japan
M. Tatsumi
Affiliation:
Advanced Materials R & D Laboratories, Sumitomo Electric Industries Ltd., 1-1-1 Koya-kita, Itami, Hyogo 664, Japan
*
[email protected]
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Abstract

Raman scattering (RS) experiments have been carried out to determine both residual strain and alloy composition in a bulk Si1−xGex single crystal with compositional gradient, which can be used as a focusing and diffracting X-ray monochromator. Since RS results are influenced both by strain and by composition, it is difficult to determine them separately from the observed phonon position. By analyzing strain effect on RS in connection with a strain model developed for bulk mixed crystals, both residual strain and alloy composition are evaluated. It is found that the alloy composition evaluated from the RS results is in good agreement with that measured by the standard chemical analysis. It is also found that the axial and radial strain components vary from −0.76×10−3 to −1.2×10−3 and 3.6×10−4 to 5.7×10−4, respectively, for the almost linear variation in composition from 0.034 to 0.055.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 325 - 328
Copyright
© EDP Sciences, 2004

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References

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