Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-25T17:08:50.382Z Has data issue: false hasContentIssue false

Pulsed laser deposition of barium metaplumbate thin films for ferroelectric capacitors

Published online by Cambridge University Press:  12 June 2003

A. I. Mardare*
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal
C. C. Mardare
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal
J. R. A. Fernandes
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal Universidade de Trás-os-Montes e Alto Douro, Departamento de Física, 5001-911 Vila Real, Portugal
P. M. Vilarinho
Affiliation:
Universidade de Aveiro, Departamento de Engenharia Cerâmica e do Vidro, 3810-193, Aveiro, Portugal
E. Joanni
Affiliation:
INESC-Porto, Unidade de Optoelectrónica e Sistemas Electrónicos, 4169-007 Porto, Portugal Universidade de Trás-os-Montes e Alto Douro, Departamento de Física, 5001-911 Vila Real, Portugal
Get access

Abstract

Barium metaplumbate thin films were deposited in situ by pulsed laser deposition on Si/SiO2/Ti/Pt substrates with a high deposition rate. The temperatures used ranged between 400 °C and 700 °C. As the deposition temperature was increased, the films assumed a strong (222) preferential orientation. This orientation of the electrodes was reflected on the PZT films, having a very big influence on their ferroelectric behavior. The PZT films made over BPO deposited at high temperature presented high values of remanent polarization (43 μC/cm2) but indications of high leakage currents could be observed in the hysteresis loops. By using BPO bottom electrodes, a 30% improvement in the fatigue behavior of PZT capacitors when compared with the normal platinum electrodes was observed.

Keywords

Type
Research Article
Copyright
© EDP Sciences, 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Shanon, R.D., Bierstedt, P.E., J. Am. Ceram. Soc. 53, 635 (1970) CrossRef
Ikushima, H., Hayakawa, S., Solid-State Electron. 9, 921 (1966) CrossRef
Hsieh, Y., Fu, S., Ceram. Intern. 18, 289 (1992) CrossRef
Duiker, H.M., Beale, P.D., Scott, J.F., Paz de, C.A. Araujo, B.M. Melnick, J.D. Cuchlaro, L.D. McMillan, J. Appl. Phys. 68, 5783 (1990) CrossRef
Desu, S.B., Phys. Stat. Sol. A 151, 467 (1995) CrossRef
Chao, G., Wu, J., Jpn. J. Appl. Phys. 40, 2417 (2001) CrossRef
Chen, M.S., Wu, T.B., Wu, J.M., Appl. Phys. Lett. 68, 1430 (1996) CrossRef
Chen, M.S., Wu, J.M., Wu, T.B., Jpn. J. Appl. Phys. 34, 4870 (1995) CrossRef
Morimoto, T., Hidaka, O., Yamakawa, K., Arisumi, O., Kanaya, H., Iwamoto, T., Kumura, Y., Kunishima, I., Tanaka, S., Jpn. J. Appl. Phys. 39, 2110 (2000) CrossRef
Ramesh, R., Sands, T., Keramidas, V.G., Fork, D.K., Mater. Res. Soc. Symp. Proc. 310, 195 (1993) CrossRef
Luo, Y.R., Wu, J.M., Appl. Phys. Lett. 79, 3669 (2001) CrossRef
A.I. Mardare, C.C. Mardare, E. Joanni, J.R.A. Fernandes, P.M. Vilarinho, A.L. Kholkin, Ferroelectrics (to be published)