Hostname: page-component-cd9895bd7-7cvxr Total loading time: 0 Render date: 2024-12-25T17:25:34.939Z Has data issue: false hasContentIssue false
  • English
  • Français

PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8 – 2.2 GHz Band

Published online by Cambridge University Press:  15 February 1999

K. Kassmi ,
N. Nolhier ,
P. Rossel ,
H. Tranduc ,
P. Kouakou ,
P. Gola ,
M. El Hitmy  and
R. Maimouni
K. Kassmi
Affiliation:
École supérieure de technologie, Complexe universitaire, B.P. 473, Oujda, Marocco Laboratoire d'Électronique Appliquée et d'Automatique (LEAA), Route sidi Maâfa, B.P. 524, Oujda, Marocco
N. Nolhier
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
P. Rossel
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
H. Tranduc
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
P. Kouakou
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
P. Gola
Affiliation:
RF Semiconductor Division, Motorola Semiconducteurs S.A., B.P. 1029, 31023 Toulouse Cedex, France
M. El Hitmy
Affiliation:
Laboratoire d'Électronique Appliquée et d'Automatique (LEAA), Route sidi Maâfa, B.P. 524, Oujda, Marocco
R. Maimouni
Affiliation:
École supérieure de technologie, Complexe universitaire, B.P. 473, Oujda, Marocco
Get access

Abstract

In this paper, we propose a model for the LDMOS transistor used for poweramplification in the frequencies band 1.8–2.2 GHz dedicated to the mobiletelephony system Digital Cellular System (DCS). This model takes into account thebehaviour of each internal region of the power structure. A new representation of thenon-linear inter-electrode capacitances, drain-gate Cgd and drain-source Cds , is proposed. The obtained model is implemented in the circuit simulator PSPICE, whichgives an overall evaluation of the transistor performances in the radio frequencypower amplification mode. This model is Maynly intended to the system designer. Astudy of the power amplification in the SHF band at 2 GHz is performed. A goodagreement between experimental and simulation results is found.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 2 , February 1999 , pp. 171 - 178
Copyright
© EDP Sciences, 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

N. Camilleri, J. Costa, D. Lovelace, D. Ngo, IEEE MTT-S Int. Microwave Sympos. IMS'93, pp. 545-548, 1993.
A. Wood, C. Dragon, W. Burger, IEEE Int. Electron Dev. Meeting IEDM'96, San Francisco, USA, pp. 87-90, 1996.
Ma. Gordon, W. Burger, C. Dragon, T. Gillenwater, IEDM'96, pp. 91-94, 1996.
T. Ohguro, M. Saito, E. Morifuji, K. Murakami, K. Matsuzaki, T. Yoshitomi, IEDM'96, pp. 83-86, 1996.
J. C. Costa, D. Lovelace, D. Ngo, N. Camilleri, IEEE MTT-S IMS'93, pp. 293-296, 1993.
Grand, D., Tregidga, A., Sol. State Technol. 28, 111 (1985).
O. Ishikawa, H. Esaki, IEEE Trans. Electron Dev. ED-34, 1157 (1987).
I. Yoshida, M. Katsueda, S. Ohtaka, Y. Maruyama, T. Okabe, International Symposium on Power Semiconductor Devices and ICs ISPSD'92, Tokyo, Japan, pp. 156-157, 1992.
PSPICE Circuit Analysis, Installation and Utilisation Manual, by MicroSim Corporation, 1990.
F. David, M.A. Haslam, E. Margaret, M.A. Clarke, L. Burly, Power Conversion and Intelligent Motion Conference PCIM'90, Proceedings Addendum, pp. 1-8, 1990.
N.M. Darwish, IEEE Trans. Electron Dev. ED-33, 1710 (1986).
D. Moncoqut, D. Farenc, P. Rossel, G. Charitat, H. Tranduc, J. Victory, I. Pagès, IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM'96, Minneapolis, USA, pp. 216-219, 1996.
Rossel, P., Tranduc, H., Sanchez, J.L., Bellaouar, A., Rev. Phys. Appl. 18, 487 (1983). CrossRef
Kassmi, K., Rossel, P., Tranduc, H., Oms, F., J. Phys. III France 4, 503 (1994). CrossRef
Rossel, P., Maimouni, R., Belabadia, M., Tranduc, H., Cordonnier, C.E., Bairanzadé, M., J. Phys. Colloq. France 49, C4-621 (1998).
J. Victory, J. Sanchez, T. DeMassa, B. Welfert, IEEE Trans. Electron Dev. ED-43, 157 (1996).