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PSPICE model of the power LDMOS transistor for radio frequency applications in the 1.8 – 2.2 GHz Band

Published online by Cambridge University Press:  15 February 1999

K. Kassmi ,
N. Nolhier ,
P. Rossel ,
H. Tranduc ,
P. Kouakou ,
P. Gola ,
M. El Hitmy  and
R. Maimouni
K. Kassmi
Affiliation:
École supérieure de technologie, Complexe universitaire, B.P. 473, Oujda, Marocco Laboratoire d'Électronique Appliquée et d'Automatique (LEAA), Route sidi Maâfa, B.P. 524, Oujda, Marocco
N. Nolhier
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
P. Rossel
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
H. Tranduc
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
P. Kouakou
Affiliation:
Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS), 7 avenue du Colonel Roche 31077 Toulouse, France
P. Gola
Affiliation:
RF Semiconductor Division, Motorola Semiconducteurs S.A., B.P. 1029, 31023 Toulouse Cedex, France
M. El Hitmy
Affiliation:
Laboratoire d'Électronique Appliquée et d'Automatique (LEAA), Route sidi Maâfa, B.P. 524, Oujda, Marocco
R. Maimouni
Affiliation:
École supérieure de technologie, Complexe universitaire, B.P. 473, Oujda, Marocco
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Abstract

In this paper, we propose a model for the LDMOS transistor used for poweramplification in the frequencies band 1.8–2.2 GHz dedicated to the mobiletelephony system Digital Cellular System (DCS). This model takes into account thebehaviour of each internal region of the power structure. A new representation of thenon-linear inter-electrode capacitances, drain-gate Cgd and drain-source Cds , is proposed. The obtained model is implemented in the circuit simulator PSPICE, whichgives an overall evaluation of the transistor performances in the radio frequencypower amplification mode. This model is Maynly intended to the system designer. Astudy of the power amplification in the SHF band at 2 GHz is performed. A goodagreement between experimental and simulation results is found.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 5 , Issue 2 , February 1999 , pp. 171 - 178
Copyright
© EDP Sciences, 1999

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