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Physical and technological limitations of NanoCMOS devicesto the end of the roadmap and beyond

Published online by Cambridge University Press:  10 January 2007

S. Deleonibus
S. Deleonibus*
Affiliation:
CEA-LETI/NANOTEC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 09, France
*
[email protected]
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Abstract

Since the end of the last millenium, the microelectronics industry has been facing new issues as far as CMOS devices scaling is concerned. Linear scaling will be possible in the future if new materials are introduced in CMOS device structures or if new device architectures are implemented. Innovations in the electronics history have been possible because of the strong association between devices and materials research. The demand for low voltage, low power and high performance are the great challenges for the engineering of sub 50 nm gate length CMOS devices. Functional CMOS devices in the range of 5 nm channel length have been demonstrated. The alternative architectures allowing to increase devices drivability and reduce power consumption are reviewed. The issues in the field of gate stack, channel, substrate, as well as source and drain engineering are addressed. HiK gate dielectric and metal gate are among the most strategic options to consider for power consumption and low supply voltage management. By introducing new materials (Ge, diamond/graphite carbon, HiK, ...), Si based CMOS will be scaled beyond the ITRS as the future System-on-Chip Platform integrating also new disruptive devices. For example, the association of C-diamond with HiK, as a combination for new functionalized Buried Insulators, will bring new ways of improving short channel effects and suppress self-heating. Because of the low parasitics required to obtain high performance circuits, alternative devices will hardly compete against logic CMOS.

Keywords

Type
Review Article
Information
The European Physical Journal - Applied Physics , Volume 36 , Issue 3 , December 2006 , pp. 197 - 214
Copyright
© EDP Sciences, 2006

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References

The International Technology Roadmap for Semiconductors, edn. 2005
H. Iwai, IEDM Tech Digest 2004, San Francisco, CA, Dec. 2004, pp. 11–14
S. Deleonibus et al., IEEE Electr. Device L. 173 (2000)
G. Bertrand et al., Silicon Nanoelectronics Workshop 2000, Honolulu, HI, June 2000, pp. 10, 11
Bertrand, G. et al., Solid State Electron. 48, 505 (2004) CrossRef
Romanjek, K. et al., IEEE Electr. Device L. 25, 583 (2004) CrossRef
S. Deleonibus et al., ESSDERC Tech. Digest 1999, Leuven, Sept. 1999, pp. 119–126
H. Iwai et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 163–166
C. Caillat et al., VLSI Tech. Symp. Tech. Digest 1999, June 1999, Kyoto, Japan, pp. 89, 90
Taur, Y. et al., IBM J. Res. Dev. 39, 245 (1995) CrossRef
K. Gopalakrishnan et al., IEDM2002 Tech. Digest, San Francisco, CA, Dec. 2002, pp. 289–291
T. Oyamatsu et al., VLSI Tech. Symp. Tech. Digest, Kyoto, Japan, June 1993, pp. 89, 90
Schockley, W., Solid State Electron. 2, 35 (1961) CrossRef
V. De et al., VLSI Tech. Symp. Tech. Digest 1998, Honolulu, HI, June 1998, pp. 95, 96
W. Wong et al., IEDM Tech. Digest 1993, Washington, DC, Dec. 1993, pp. 705–708
Ohguro, T. et al., IEEE T. Electr. Device L. 45, 710 (1998) CrossRef
T. Ernst et al., VLSI Technology Symposium 2003 Tech. Digest, Kyoto, Japan, pp. 51, 52
F. Ducroquet et al., IEDM Tech. Digest 2004, San Francisco, CA, Dec. 2004, pp. 437–440
M. Carroll et al., IEDM Tech. Digest 2000, San Francisco, CA, Dec. 2000, pp. 145–148
K. Rim et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 707–710
Hartmann, J.M. et al., Semicond. Sci. Tech. 19, 311 (2004) CrossRef
E.A. Fitzgerald et al., Phys. Status Solidi A 171 (1999)
S. Bedell et al., MRS Spring Meeting Proc., April 2004
F. Andrieu et al., ESSDERC 2003 Proc., Estoril, Portugal, Sept. 2003, pp. 267–270
J. Alieu et al., ESSDERC 98, Bordeaux, France, Sept. 1998, p. 144
A.-C. Lindgren et al., ESSDERC 02, Bologna, Italy, Sept. 2002, p. 175
N. Collaert et al., Silicon Nanoelectronics Workshop Digest 2002, Honolulu, HI, June 2002, pp. 15, 16
N. Collaert et al., ESSDERC 02, Bologna, Italy, Sept. 2002, p. 263
K.A. Jenkins, K. Rim, IEEE Electron. Device L. 23, (2002)
G. Xia et al., IEEE T. Electron Dev. 51, (2004)
H. Kawasaki et al., IEDM 2004 Tech. Digest, San Francisco, CA, Dec 2004, pp. 169–172
K. Rim et al., VLSI Tech. Symp Digest 2002, Honolulu, HI, June 2002, pp. 12, 13
O. Weber et al., VLSI Tech. Symp. Digest 2004, Honolulu, HI, June 2004, pp. 42, 43
F. Andrieu et al., 2006 VLSI Tech. Symp. Digest, Honolulu, HI, June 2006, pp. 168-169 and F. Andrieu et al., IEEE Intern. SOI Conf. Digest, Honolulu, HI, Oct. 2005, p. 223
T. Tezukae et al., 2002 VLSl Tech. Symp. Digest, Honolulu, HI, June 2002, pp. 96, 97
F. Boeuf et al., IEDM 2004 Digest, San Francisco, CA, Dec 2004, pp. 425–428
F. Andrieu et al., 2005 VLSI Tech. Symp. Digest, Kyoto, Japan, June 2005, pp. 176, 177
T. Mizuno et al., 2003 VLSI Tech. Symp. Digest, Kyoto, Japan, June 2003, pp. 97, 98
M. Yang et al., 2004 VLSI Tech. Symp. Honolulu, HI, June 2004, pp. 160, 161
M.L. Lee, E.A. Fitzgerald, IEDM 2003 Dig, Washington, DC, Dec. 2003, pp. 131–429
A. Chatterjee et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 777–780
A. Yagashita et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 785–788
B. Guillaumot et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 335–338
B. Tavel et al., IEDM 2001 Digest, Washington, DC, Dec 2001, pp. 825–828
J. Kedzierski et al., IEDM 2002 Digest, San Francisco, CA, Dec. 2002, pp. 247–250
W.P. Maszara et al., IEDM 2002 Digest, San Francisco, CA, Dec. 2002, pp. 367–370
C. Hobbs et al., VLSI Tech. Symp. 2003 Tech. Digest, Kyoto, Japan, pp. 9, 10
D. Souil et al., 3rd ULIS Workshop 2002, Munich, FRG, March 2002, pp. 139–142
G. Timp et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 615–618
S. Takagi et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 619–622
J. Lee et al., IEDM Tech. Digest 1999, Washington, DC, Dec. 1999, pp. 133–136
H. Iwai et al., IEDM Tech. Digest 2002, San Francisco, CA, Dec 2002, pp. 625–627
O. Weber et al., IEDM 2004, San Francisco, CA, Dec. 2004, pp. 867–670
J.L. Pelloie, ISSCC Tech. Digest 1999, San Francisco, CA, Feb. 1999, p. 428
L. Leobandung et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 403–407
J. Lolivier et al., ECS Spring 2003 Proc., Paris, France, April 2003, pp. 379
B. Doris et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 267–270
J. Lolivier et al., SOI Conference 2004, Charleston, SC, October 2004, pp. 17, 18
H. Nakayama et al., IEEE SOI Conf. 2000 Proc., Wakefield, Mass, Oct 2000, pp. 128, 129
K. Oshima et al., SOI Conference 2002 Tech. Digest, Oct 2002, pp. 95, 96
H.S.P. Wong et al., IEDM Tech. Digest 1997, Washington, DC, Dec. 1997, pp. 427–430
F. Allibert et al., ESSDERC 2001, Nurnberg, FRG, Sept 2001, pp. 267–270
B. Yu et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 251–253
J. Kedzierski et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 247–250
F.L. Yang et al., IEDM 2002 Tech. Digest, San Francisco, CA, Dec 2002, pp. 255–258
E.C. Jones et al., Dev. Res. Conf. 2001 Digest, June 2001
Sekigawa, T., Solid State Electron 27, 827 (1984) CrossRef
D. Hisamoto, in Tech. Digest of IEDM (1998), pp. 833–836
Balestra, F. et al., IEEE Electr. Device L. 8, 410 (1987) CrossRef
Vinet, M. et al., IEEE Electr. Device L. 26, 317 (2005) CrossRef
M. Vinet et al., ECS Spring meeting 2005 Proc., Québec, CA, May 2005, pp. 285–296
T. Poiroux et al., ULIS2005 Proc, Bologna, Italy, April 2005, pp. 71–74
Poiroux, T. et al., Microelectron. Eng. 80, 378 (2005) CrossRef
M. Vinet et al., Int. Conf. SSDM 2004 Proc, Tokyo, Japan, Sept 2004, pp. 768, 769
J.P. Colinge et al., IEDM 1990 Digest, San Francisco, CA, Dec 1990, pp. 595–598
S. Harrison et al., IEDM 2003 Digest, Washington, DC, Dec 2003, pp. 449–452
K.W. Guarini et al., IEDM 2001 Digest, Washington, DC, Dec 2001, pp. 425–428
J.H. Lee et al., IEDM 1999 Digest, Washington, DC, Dec 1999, pp.71–74
J. Lolivier et al., ESSDERC 2004 Proc., Leuven, Belgium, Sept 2004, pp. 177–180
X. Huang et al., IEDM 1999 Digest, Washington, DC, Dec. 1999, pp. 67–70
B. Doyle et al., VLSI Tech. Symp. 2003 Digest, Kyoto, Japan, June 2003, pp. 133, 134
F.L. Yang et al., IEDM 2002 Digest, San Francisco, CA, Dec 2002, pp. 255–258
Park, J.T. et al., IEEE Electr. Device L. 22, 405 (2001) CrossRef
F.L. Yang et al., VLSI Tech. Symp. 2004 Digest, Honolulu, HI, June 2004, pp. 196, 197
Choi, Y.K. et al., Solid State Electron 46, 1595 (2002) CrossRef
C. Jahan et al., IEEE VLSI Tech. Symp. 2005, Kyoto, Japan, June, 2005, pp. 112, 113
Colinge, J.P., Solid State Electron 48, 897 (2004) CrossRef
Fossum, J.G. et al., IEEE T. Electron Dev. 49, 808 (2002) CrossRef
H.S.P. Wong et al., IEDM 1998 Digest, San Francisco, CA, Dec 1998, pp. 407–410
T. Ernst et al., in IEEE T. Electron Dev. 50, 830 (2003)
Gamiz, F. et al., J. Appl. Phys. 94, 5732 (2003) CrossRef
Suzuki, K. et al., IEEE T. Electron Dev. 40, 2326 (1993) CrossRef
J.M. Ha et al., IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 639–642
K. Goto et al., IEDM Tech. Digest 1997, Washington, DC, Dec. 1997, pp. 471–474
M. Takase et al., IEDM Tech. Digest 1997, Washington, DC, Dec. 1997, pp. 475–478
Y. Sasaki et al., VLSI Techn. Symp. 2004 Tech. Digest, Honolulu, HI, June 2004, pp. 180, 181
Noguchi, T. et al., Proc. Mat. Res. Soc. 146, 35 (1985) CrossRef
C. Laviron et al., 2nd IWJT, IEEE-Cat. No. 01EX541C, 2001, Tokyo, Japan, Nov. 2001, pp. 91–94.
T. Ohguro, ECS Symp on ULSI 1997, Montreal, CA, Oct. 1997, p. 275
Nuryadi, R. et al., J. Vac. Sci. Tech. B 20, 167 (2002) CrossRef
E. Dubois, G. Larrieu, Solid State Electron 997 (2002)
B.Y. Tsui, C.P. Lin, IEEE Electron Device L. 430 (2004)
Niu, G. et al., IEEE T. Electron Dev. 46, 1912 (1999) CrossRef
Chen, K. et al., Solid State Electron 39, 1515 (1996) CrossRef
Datta, S. et al., Superlattice. Microst. 23, 771 (1998) CrossRef
Assad, F. et al., IEEE T. 47, 232 (2000) CrossRef
F. Assad et al., IEDM Tech. Digest, Washington, DC, Dec. 1999, pp. 5547–5550
A. Rinetour et al., IEDM Tech. Digest, Washington, DC, Dec. 2003, pp. 433–436
Chi On Chui et al., IEDM Tech. Digest, San Francisco, CA, Dec. 2002, pp. 437–440
Nishitami-Gamo, et al., Diam. Relat. Mater. 9, 941 (2000) CrossRef
Lagrange, et al., Carbon 37, 807 (1999) CrossRef
Deleonibus, S. et al., Int. J. High Speed Electron. Syst. 16, 193 (2006) CrossRef
L. Clavelier et al., 2005 Silicon Nanolectronics Workshop, Kyoto, Japan, June 2005, pp. 18, 19
C. On Chui et al., IEDM 2002, pp. 437–440
A. Ritenour et al., IEDM 2003, pp. 433–436
Zhu, S. et al., IEEE Electron Device L. 26, 81 (2005)
Yu, D.S. et al., IEEE Electron Device L. 25, 138 (2004) CrossRef
Y. Ono et al., IEDM 2001 Tech. Digest, Washington, DC, Dec 2001, pp. 367–370
Tiwari, S. et al., Appl. Phys. Lett. 68, 1377 (1996) CrossRef
K. Yano, IEDM Tech. Digest 1998, San Francisco, CA, Dec. 1998, pp. 107–110
A. Fernandes et al., IEDM 2001 Tech. Digest, Washington, DC, Dec 2001, pp. 155–158
B. de Salvo et al., IEDM Tech. Digest 2003, Washington, DC, Dec. 2003, pp. 597–600
G. Molas et al., WODIM 2002 Proc., Grenoble, France, Nov. 2002, pp. 175–178
M. Sanquer et al., SNW 2003, Kyoto, Japan, pp. 70–71
M. Specht et al., IEDM Tech. Digest 1999, Washington, DC, Dec. 1999, pp. 383–341
G. Molas et al., IEDM Tech. Digest 2004, San Francisco, CA, Dec. 2004, pp. 877–880
L. Perniola et al., IEDM Tech. Digest 2005,Washington, DC, Dec. 2005, pp. 877–880