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Photovoltaic responses of ZnO/Si heterojunctions synthesized by sol-gel method

Published online by Cambridge University Press:  21 July 2011

H. Liu ,
S. Zhao ,
K. Zhao  and
W. Liu
H. Liu
Affiliation:
Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, P.R. China
S. Zhao
Affiliation:
Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, P.R. China
K. Zhao*
Affiliation:
Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, P.R. China State Key Laboratory of Petroleum Resource and Prospecting, China University of Petroleum, Beijing 102249, P.R. China International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, P.R. China
W. Liu
Affiliation:
Laboratory of Optic Sensing and Detecting Technology, China University of Petroleum, Beijing 102249, P.R. China
*
a e-mail: [email protected]
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Abstract

ZnO/Si heterojunctions were prepared by the sol-gel method and hexagonal polycrystalline wurtzite structures with pores were observed by a field emission scanning electron microscope. The steady photovoltage properties of ZnO/Si heterojunctions were obtained under the illumination of a 532 nm continuum solid state laser with a 50 Hz chopper. In addition ns photoresponse signals were found when the samples were excited by a ps pulsed laser at room temperature. A possible mechanism was proposed to describe the photovoltaic process in the ZnO/Si heterojunction.

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 55 , Issue 1: Focus on Hakone XII , July 2011 , 10501
Copyright
© EDP Sciences, 2011

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