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Phase separation phenomena in Sn-Sb-Se glassy semiconductors

Published online by Cambridge University Press:  14 March 2007

P. Kumar ,
J. Kumar  and
R. Thangaraj
P. Kumar
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, 143 005 Amritsar, India
J. Kumar
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, 143 005 Amritsar, India
R. Thangaraj*
Affiliation:
Semiconductors Laboratory, Department of Applied Physics, Guru Nanak Dev University, 143 005 Amritsar, India
*
[email protected]
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Abstract

Differential scanning calorimetric (DSC) and X-ray diffraction (XRD) measurements on Sn-Sb-Se glassy semiconductors have been performed. Phase separation has been revealed with the broadening of the exothermic peak for 11 at% of Sn. The X-ray diffraction studies of annealed samples show that the investigated system could be treated as a solid solution of Sb2Se3 and SnSe2 phases. The deconvolution procedure was used to investigate the crystallization mechanism for the broad exothermic peaks in the thermal scans. From the heating rate dependence of the crystallization temperature, the crystallization parameters have been determined using Kissinger equation and Matusita equation. The investigated parameters indicate higher thermal stability and glass forming ability of Sn10Sb20Se70 chalcogenide glass.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 38 , Issue 1 , April 2007 , pp. 1 - 5
Copyright
© EDP Sciences, 2007

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