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Optical and electrical properties of pure and Ni-modified ZnS nanocrystals
Published online by Cambridge University Press: 21 October 2010
Abstract
ZnS and Ni doped ZnS nanoparticles were synthesized through chemical precipitation method using a high-boiling solvent. The nanocrystillanity of the prepared nanostructures is confirmed by X-ray diffraction (XRD). The mean crystal size obtained by full width half maxima (FWHM) analysis is 3.2 nm for ZnS and 4.3 nm for ZnS:Ni. An optical absorption study conducted in UV-vis range 150–800 nm reveals the transparency of these nanocrystals in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 3.92 eV for ZnS and 3.88 eV for ZnS:Ni nanoparticles. The electrical resistivity data reveals semiconducting behaviour to both compositions. Fitting of resistivity data in Mott's variable range hopping model (VRH) shows that nickel (1.5%) doping in ZnS reduces gap parameters from 4.78 to 4.22 eV. Based on this model the carrier density, energy gap and hopping distances are calculated for both pure and Ni modified nanocrystals.
- Type
- Research Article
- Information
- The European Physical Journal - Applied Physics , Volume 52 , Issue 2: Focus on Numelec , November 2010 , 20602
- Copyright
- © EDP Sciences, 2010
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