Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-25T17:00:54.369Z Has data issue: false hasContentIssue false
  • English
  • Français

Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−y Cy (y ≤0.03)

Published online by Cambridge University Press:  15 July 1999

Ph. Dollfus ,
S. Galdin  and
P. Hesto
Ph. Dollfus*
Affiliation:
Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
S. Galdin
Affiliation:
Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
P. Hesto
Affiliation:
Institut d'Électronique Fondamentale (URA 22 du CNRS), Université Paris-Sud, Bâtiment 220, 91405 Orsay Cedex, France
*
[email protected]
Get access

Abstract

Electron transport properties in tensile strained Si-based materials are theoretically analyzed using Monte-Carlo calculation. We focus our interest on in-plane transport inSi and Si1−y Cy (y ≤ 0.03), grown respectively on 〈001〉Si1−x Gex pseudo-substrate and Si substrate, with a view toField-Effect-Transistor application. In comparison with unstrained Si, the tensilestrain effect is shown to be very attractive in Si: drift mobilities greater than 3000 cm2/Vs are obtained at 300 K for a Ge fraction mole of 0.2 in thepseudo-substrate. In the Si1−y Cy /Si system, that does not need anypseudo-substrate, the beneficial strain effect on transport is counterbalanced by thealloy scattering whose influence on mobility is studied. If the alloy potential isgreater than about 1 eV, the advantage of strain-induced reduction of effective massis lost in terms of stationary transport performance at 300 K.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 7 , Issue 1 , July 1999 , pp. 73 - 77
Copyright
© EDP Sciences, 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., Herog, H.J., Phys. Rev. Lett. 54, 2441 (1985). CrossRef
Crabbé, E.F., Meyerson, B.S., Harame, D., Stork, J.M.C., Megdanis, A.C., Cotte, J., Chu, J., Gilbert, M., Stanis, C., Comfort, J.H., Patton, G., Subbana, S., IEEE Electr. Dev. 40, 2100 (1993). CrossRef
Schüpen, A., Gruhle, A., Kibbel, H., Erben, U., König, U., Electron. Lett. 30, 1187 (1994). CrossRef
Verdonckt-Vandebroek, S., Crabbé, E.F., Meyerson, B.S., Harame, D.L., Restle, P.J., Stork, J.M.C., Johnson, J.B., IEEE Trans. Electr. Dev. 41, 90 (1994). CrossRef
P. Bouillon, T. Skotnicki, C. Kelaidis, R. Gwoziecki, P. Dollfus, J.-L. Regolini, I. Sagnes, S. Bodnar, IEDM Tech. Dig., San Francisco, USA, 1996, p. 559.
Garchery, L., Sagnes, I., Badoz, P.A., Appl. Surf. Sci. 102, 202 (1996). CrossRef
Ismail, K., Nelson, S.F., Chu, J.O., Meyerson, B.S., Appl. Phys. Lett. 63, 660 (1993). CrossRef
König, U., Boers, A.J., Schäffer, F., Kasper, E., Electron. Lett. 28, 160 (1992). CrossRef
Ismail, K., Rishton, S., Chu, J.O., Chan, K., Meyerson, B.S., IEEE Electr. Dev. Lett. 14, 348 (1993). CrossRef
Brunner, K., Eberl, K., Winter, W., Phys. Rev. Lett. 76, 303 (1996). CrossRef
Stein, B.L., Yu, E.T., Croke, E.T., Hunter, A.T., Laursen, T., Bair, A.E., Mayer, J.W., Ahn, C.C., Appl. Phys. Lett. 71, 3413 (1997). CrossRef
Osten, H.J., J. Appl. Phys. 84, 2716 (1998). CrossRef
Rücker, H., Heinemann, B., Röpke, W., Kurps, R., Krüger, D., Lippert, G., Osten, H.J., Appl. Phys. Lett. 73, 1682 (1998). CrossRef
L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimani, C. Magee, IEDM Tech. Dig., San Francisco, USA, 1996, p. 249.
Eberl, K., Brunner, K., Winter, W., Thin Solid Films 294, 98 (1997). CrossRef
Osten, H.J., Gaworzewski, P., J. Appl. Phys. 82, 4977 (1997). CrossRef
People, R., IEEE J. Quantum Electron. 22, 1696 (1986). CrossRef
Ershov, M., Ryzhii, V., J. Appl. Phys. 76, 1924 (1994). CrossRef
Ferry, D.K., Phys. Rev. B 14, 1605 (1976). APS Link not valid for this citation CrossRef
Dollfus, P., J. Appl. Phys. 82, 3911 (1997). CrossRef
Bufler, F.M., Graf, P., Keith, S., Meinerzhagen, B., Appl. Phys. Lett. 70, 2144 (1997). CrossRef
Fischetti, M.V., Laux, S.E., J. Appl. Phys. 80, 2234 (1996). CrossRef
Yamada, T., Zhou, J.R., Miyata, H., Ferry, D.K., IEEE Trans. Electr. Dev. 41, 1513 (1994). CrossRef
Th. Vogelsang, K.R. Hoffmann, Appl. Phys. Lett. 63, 186 (1993). CrossRef
Harrison, J.W., Hauser, J.R., Phys. Rev. B 13, 5347 (1976). APS Link not valid for this citation CrossRef
Kay, L.E., Tang, T.W., J. Appl. Phys. 70, 1483 (1991). CrossRef
Venkataraman, V., Liu, C.W., Sturm, J.C., Appl. Phys. Lett. 63, 2795 (1993). CrossRef
Dollfus, P., Phys. Stat. Sol. (b) 204, 541 (1997). 3.0.CO;2-2>CrossRef