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The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions

Published online by Cambridge University Press:  15 October 1999

M. Ketata ,
K. Ketata ,
S. Koumetz ,
J. Marcon  and
C. Dubois
M. Ketata
Affiliation:
LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
K. Ketata*
Affiliation:
LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
S. Koumetz*
Affiliation:
LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
J. Marcon
Affiliation:
LEMI (UPRES EA 2654 du CNRS), IUT, Université de Rouen, rue Lavoisier, 76821 Mont-Saint-Aignan, France
C. Dubois
Affiliation:
LPM-INSA de Lyon, 20 avenue A. Einstein, 69621 Villeurbanne, France
*
[email protected] [email protected]
[email protected] [email protected]
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Abstract

This study reports on Be diffusion in InGaAsP layers grown by gas source molecularbeam epitaxy. The experimental structures consisted of a 2000 Å Be-doped(3 × 109 cm−3) In0.73Ga0.27As0.58P0.42 layersandwiched between two 5000 Å undopedIn0.73Ga0.27As0.58P0.42 layers. The samples were subjected to rapidthermal annealing in the temperature range from 700 to 900 °C with timedurations of 10 to 240 s. Secondary ion mass spectrometry was employed for aquantitative determination of the Be depth profiles. Concentration profiles of Be inInGaAsP have been simulated according to two kick-out models: the first modelinvolving neutral Be interstitials and singly positively charged Ga, Inself-interstitials, and the second model involving singly positively charged Beinterstitials and doubly positively charged Ga, In self-interstitials. Comparison withexperimental data shows that the first kick-out model gives a better description.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 8 , Issue 1 , October 1999 , pp. 19 - 24
Copyright
© EDP Sciences, 1999

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