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Microscopic defects and homogeneity investigations in 4H-SiC epitaxial wafers by UV scanning photoluminescence spectroscopy

Published online by Cambridge University Press:  15 July 2004

I. El Harrouni ,
J.-M. Bluet ,
D. Ziane ,
C. Sartel  and
G. Guillot
I. El Harrouni
Affiliation:
Laboratoire de Physique de la Matière, INSA de Lyon, Domaine Scientifique de la Doua, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
J.-M. Bluet*
Affiliation:
Laboratoire de Physique de la Matière, INSA de Lyon, Domaine Scientifique de la Doua, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
D. Ziane
Affiliation:
Laboratoire de Physique de la Matière, INSA de Lyon, Domaine Scientifique de la Doua, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
C. Sartel
Affiliation:
Laboratoire Multimatériaux et Interfaces, UCB Lyon 1, Bât. Berthollet (731), 43 bd du 11 novembre 1918, 69622 Villeurbanne Cedex, France
G. Guillot
Affiliation:
Laboratoire de Physique de la Matière, INSA de Lyon, Domaine Scientifique de la Doua, Bât. Blaise Pascal, 7 Avenue Jean Capelle, 69621 Villeurbanne Cedex, France
*
[email protected]
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Abstract

UV scanning photoluminescence spectroscopy is applied to 4H-SiC epitaxy characterization. In a first part, the technique is used for triangular defects characterization. The results show that two kinds of defects are present. Some defects are inclusion of cubic SiC which is confirmed by Raman spectroscopy. The other ones consist of staking faults of different thicknesses acting as quantum wells. In a second part, the effective lifetime profile is mapped for a whole 50 mm epitaxy using the variation of room temperature PL intensity versus excitation intensity.

Keywords

Type
Research Article
Information
The European Physical Journal - Applied Physics , Volume 27 , Issue 1-3: Tenth International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP X) , July 2004 , pp. 235 - 238
Copyright
© EDP Sciences, 2004

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